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Press-pack IGBTs, semiconductor switches for pulse power
IEEE Conference Record - Abstracts. PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference (Cat. No.01CH37255), 2002Summary form only given as follows. The semiconductor switch has been shown to be a realistic alternative to the thermionic device in pulse power applications. The introduction of new press-pack IGBT technology offers the opportunity to extend the range of high power applications for which a semiconductor switch may be considered.
F. Wakeman, W. Findlay
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A Gating Path Optimization Method for Press-Pack IGBT
2020 IEEE 1st China International Youth Conference on Electrical Engineering (CIYCEE), 2020IGBT devices are widely used in high-voltage and high-power applications. IGBT module has two kinds of packaging structure, which are welded IGBT and press-pack IGBT (PP-IGBT). Since a PP-IGBT module can integrate more chips and diode chips to obtain a large current capacity, it has been widely used in high power applications.
Huaidong Min +4 more
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IEEE transactions on power electronics
Online junction temperature (Tj) monitoring of press-pack insulated gate bipolar transistor (PP IGBT) is of great significance for improving reliability in high voltage and high power applications.
Ziyang Zhang +3 more
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Online junction temperature (Tj) monitoring of press-pack insulated gate bipolar transistor (PP IGBT) is of great significance for improving reliability in high voltage and high power applications.
Ziyang Zhang +3 more
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Influence of chip layout on temperature distribution of multi-chip press pack IGBT devices
International Conference on Electronic Packaging Technology, 2022Press Pack IGBT(PP IGBT) devices often work under high voltage and high current working conditions, and a multi-chip parallel structure is often used inside the PP IGBT device package.
Rui Zhou +5 more
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Maximum Chip Temperature Direct Monitoring for Press-Pack IGBT Integrating Temperature Sensors
IEEE transactions on power electronicsPress-pack insulated gate bipolar transistor (PP IGBT) junction temperature online monitoring is of vital importance for the health management of high-voltage power conversion systems.
Ziyang Zhang +5 more
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Application of press-pack IGBTs in traction refurbishment
Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005., 2005Press-pack IGBT technology has made significant advances in recent years. The availability of a wide range of products from multiple sources has now made this technology a realistic choice for both new build and refurbishment traction applications. Several case studies demonstrate the successful application of press-pack IGBTs in demanding traction ...
A. Golland, F. Wakeman
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2025 IEEE International Conference on Electrical Energy Conversion Systems and Control（IEECSC)
Spring failure is one of the main failure modes of press-pack IGBT devices, which is mainly manifested in the stress relaxation of the internal spring of the gate thimble, which affects the electrical contact and switching ability of the chip.
Yuqi Wang +8 more
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Spring failure is one of the main failure modes of press-pack IGBT devices, which is mainly manifested in the stress relaxation of the internal spring of the gate thimble, which affects the electrical contact and switching ability of the chip.
Yuqi Wang +8 more
semanticscholar +1 more source
Modulation Schemes for a 36MVA Press-Pack IGBT Converter under Interleaved Operation
International Conference on Electrical Machines and Systems, 2023In this paper, modulation schemes for a press-pack insulated gate bipolar transistor (IGBT) converter under interleaved operation are investigated. This article focuses on how to maximize the output capacity of paralleled converters while ensuring the ...
Meina Wu, Liang Zhou, An Hu
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Innovative metal system for IGBT press pack modules
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., 2004Two important design aspects encountered in IGBT press pack modules used for HVDC applications are short circuit failure mode (SCFM) and intermittent operating life (IOL) capabilities. The requirement that press-pack IGBT (PPI) fail safely into a short causes a design conflict with the module's desired capability to survive a high number of power ...
S. Gunturi +3 more
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IEEE transactions on power electronics
Converter valves based on the modular multilevel converter (MMC) topology are the core of the voltage source converter-based high-voltage direct current transmission system, with press-pack insulated gate bipolar transistor (PP IGBT) modules being the ...
Wei Lai +8 more
semanticscholar +1 more source
Converter valves based on the modular multilevel converter (MMC) topology are the core of the voltage source converter-based high-voltage direct current transmission system, with press-pack insulated gate bipolar transistor (PP IGBT) modules being the ...
Wei Lai +8 more
semanticscholar +1 more source