Results 161 to 170 of about 4,301 (207)

Innovative press pack modules for high power IGBTs

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2002
A new IGBT press pack package was developed to meet increasingly challenging requirements for high power converters, such as in power systems applications. The package offers significantly high tolerance to pressure nonuniformity and allows up to 100 kN of stacking pressure while effectively protecting sensitive silicon chips by using a flexible ...
S. Kaufmann, T. Lang, R. Chokhawala
openaire   +1 more source

Fretting Wear Failure Modeling of Press-Pack IGBT Device based on Digital Twin Method

Information Security Practice and Experience, 2023
Fretting wear failure is one of the main failure modes of Press-Pack IGBT (PP-IGBT) device. This paper presents a method to simulate the fretting wear failure of the PP-IGBT device based on digital twin modeling. Firstly, the digital twin model of the PP-
Yuqi Wang, Ran Yao, Hui Li, Bailing Zhou, Zeyu Duan, Zhongyuan Chen, Jinyuan Li, Miaorui Wang   +7 more
semanticscholar   +1 more source

Managing power semiconductor obsolescence by press-pack IGBT substitution

2005 European Conference on Power Electronics and Applications, 2005
Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance.
A. Golland, F. Wakeman, G. Li
openaire   +1 more source

Parasitic Consideration of Package Design within Press Pack IGBT

Applied Mechanics and Materials, 2013
Simulation technology provides a powerful tool for the package design. Parasitic are one of the most important factors for press pack IGBT. By the aid of the simulation software, the package parasitic is extracted and the current distribution among paralleled chips is analyzed. Simulation results confirm the theoretical analysis and verify the efficacy
Peng Zhang, Rong Gang Han, Wen Guang Liu, Ying Ying Su, Rui Jin, Kun Shan Yu, Jun Liu, Hai Long Bao, Yu Zhang, Jia Jie Che   +9 more
openaire   +1 more source

Investigation on Formation and Evolution Behavior of Short-Circuit Path in Press-Pack IGBT Modules

IEEE Journal of Emerging and Selected Topics in Power Electronics
The formation and the evolution behavior of short-circuit paths in press-pack IGBT (PP-IGBT) are investigated by combining test and finite element (FE) simulation.
Renkuan Liu, Hui Li, Ran Yao, Wei Lai, Siyu Chen, Xianping Chen, Zhongyuan Chen   +6 more
semanticscholar   +1 more source

Calibration Method of Junction Temperature Measurement for Press-Pack IGBTs

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021
Accurate junction temperature measurement is of great significance for the reliability assessment of power insulated-gate bipolar transistor (IGBT) devices. The $V_{\mathrm {CE}}(T)$ method is the most widely used junction temperature measurement method and is recommended by various test standards, the first step of which is the $K$ factor ...
Jie Chen, Erping Deng, Yiming Zhang, Yongzhang Huang   +3 more
openaire   +1 more source

Multi Physical Modeling for the Press-Pack IGBT Device by Considering Material Temperature Effect

IEEE Power Engineering and Automation Conference, 2022
The accuracy of multi-physics simulation analysis of Press-Pack IGBT (PP-IGBT) devices is related to the failure simulation and reliability lifetime modeling.
Ran Yao, Hui Li, Zeyu Duan, Wei Lai, Zhongyuan Chen, Yaosheng Li   +5 more
semanticscholar   +1 more source

Modelling the cauer thermal network for press pack IGBTs

2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP), 2017
Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is ...
Jinyuan Li, Erping Deng, Zhibin Zhao, Peng Zhang, Yaosheng Li   +4 more
openaire   +1 more source

Impacts of the Pressure Distribution on Dynamic Avalanche in Single Press-Pack IGBT Chip

IEEE transactions on power electronics
Within a press-pack insulated gate bipolar transistor (PP IGBT) submodule, the components are packaged by external clamping force. This external clamping force significantly affects the chip's dynamic avalanche and further degrades its turn-off ...
Tianchen Li, Yaohua Wang, Yiming Zhang, Jiayu Fan, Xuebao Li, Lei Qi, Xiang Cui   +6 more
semanticscholar   +1 more source

4.5kV press pack IGBT designed for ruggedness and reliability

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004
A novel press pack IGBT (PPI) with a rating of up to 4500 V and 2000 A is presented. During the development of this new component, special emphasis was placed on the ease of use by system manufacturers. The mechanical design is optimized in order to facilitate the clamping of the PPI in long stacks. Even if the clamping in the stack has severe pressure
S. Eicher, M. Rahimo, E. Tsyplakov, D. Schneider, A. Kopta, U. Schlapbach, E. Carroll   +6 more
openaire   +1 more source