Results 181 to 190 of about 4,301 (207)

10 kV IGBT press pack modules with series connected chips

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, 2003
A package design for a 10 kV IGBT press pack module with series connected chips was developed. IGBT press pack modules with internal series or antiseries connection are offering new opportunities and potential cost savings in different applications. The proposed package design is presented for both series as well as antiseries connection.
S. Kaufmann, F. Zwick
openaire   +1 more source

Contact Pressure Distribution Measurement for the Press Pack IGBT by Ultrasonic Measurement Method

IEEE Transactions on Instrumentation and Measurement
Even contact pressure distribution among submodules in a press-pack insulated gate bipolar transistor (PP-IGBT) is an important factor in reliability screening tests before engineering application. However, the current stress-sensitive method for contact
Zeyu Duan, Ran Yao, Hui Li, Xiao Wang, Wei Lai, Francesco Iannuzzo, Ying Li, Kai Ma   +7 more
semanticscholar   +1 more source

Press pack IGBT: high current pulse switch transcranial magnetic simulation

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014), 2014
The press pack IGBT's have exhibited an excellent power performance at range of required pulse current shape on various industrial applications; including a repetitive transcranial magnetic stimulation (rTMS). This paper describes the design, construction, testing and operation of a 125 mm electrode diameter capsule device used in a high power pulse ...
Q. Al'Akayshee, A. Sartain, F. Wakeman, A.D.C. Chan, A. Golland, M. Talebinejad   +5 more
openaire   +1 more source

Comparison of Thermal Behavior of Press-Pack IGBT Devices under Fault Scenarios in VSC-HVDC and LCC-VSC Systems

2025 Zhejiang Power Electronics Conference (ZPEC)
Flexible high voltage direct current (HVDC) technology enables asynchronous interconnection and electrical isolation between large power grids, with its importance growing as power grid technologies advance. It's classified into line commutated converter-
Huixian Shen, Jun Zhang, Zhihuan Wang, Yi Zheng   +3 more
semanticscholar   +1 more source

Reliability study and modelling of IGBT press-pack power modules

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability.
Hong Y. Long, Mark R. Sweet, E. M. S. Narayanan, Gangru Li   +3 more
openaire   +1 more source

Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module

IEEE transactions on power electronics
In this article, an electrical–thermal–mechanical (ETM) multiphysics transient finite-element (FE) model is proposed for the press-pack insulated gate bipolar transistor (PP-IGBT) module, and a targeted optimization package (TOP) is designed to enhance ...
Renkuan Liu, Hui Li, X. Luo, Ran Yao, Wei Lai, Jie Wei, Xiao Wang, Zhaoji Li, Bo Zhang, Xianping Chen   +9 more
semanticscholar   +1 more source

Development of high power press-pack IGBT and its applications

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2002
Press-pack IGBT has been developed in recent years as a superior high power IGBT device to conventional IGBT module in reliability and performance. This type of IGBT is replacing GTO or thyristor in such applications as traction, power transmission and industrial motor drive because of its excellent advantages such as high performance, high reliability,
Y. Uchida, Y. Seki, Y. Takahashi, M. Ichijoh   +3 more
openaire   +1 more source

Efficient Prediction of Steady-State Temperature Fields in Press-Pack IGBT Modules Using Deep Operator Network

2025 IEEE 3rd International Power Electronics and Application Symposium (PEAS)
Accurate and efficient prediction of the temperature field in press-pack IGBTs (PPIs) is essential for the reliable operation of flexible high-voltage direct current (HVDC) systems. This paper proposes a data-driven thermal modeling approach based on the
Yizheng Tang, Lingyu Zhu, Zizhang Kang, C. Zhan, Weicheng Wang, Shengchang Ji   +5 more
semanticscholar   +1 more source

Optimized Design of Chips Layout in Press-Pack IGBT Module

2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019
To analyze the influence of chips layout in Press-Pack IGBT modules, the current sharing, stress and temperature distribution of two types of modules with anti-parallel diodes are simulated. The results show that the case of IGBTs evenly surrounding around the diodes ensures a better current sharing, stress and temperature distribution over a wide ...
Lubin Han, Lin Liang, Zihao Zhao, Zhongyuan Chen, Yong Kang   +4 more
openaire   +1 more source

Development of Press-pack IGBT Chip for good SOA Capability

2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE), 2019
In this paper, the advantages of press-pack IGBT in DC circuit breaker are introduced. According to the requirement of press package for IGBT chip, a cell structure with field oxide in active region was designed, and the optimal value of the field oxide length was obtained.
Li Li, Rui Jin, Yaohua Wang, Mingchao Gao, Junmin Wu, Yan Pan   +5 more
openaire   +1 more source