Results 171 to 180 of about 4,301 (207)

Aging Test Method and Analysis of Press-Pack IGBT Devices Based on the Equivalent of VSC Operation Conditions

2025 IEEE International Conference on Electrical Energy Conversion Systems and Control（IEECSC)
Press-pack IGBT devices have become the preferred power devices for GW-level VSC-HVDC systems due to their advantages such as high power density per unit volume, doublesided heat dissipation, and failure short circuit.
Yan Xiong, Yuebin Zhou, Zhiyong Yuan, Kai Ma, Ying Li, Lingqi Tan, Yunjie Wu, Wei Lai, Hui Li   +8 more
semanticscholar   +1 more source

Long term short-circuit stability in Press-pack IGBTs

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016
The Press-pack IGBTs is ideally suited to applications where series operation is required; this quality is of particular interest for HVDC applications where several 100 devices may be required in a single switch. To ensure continued operation between maintenance cycles it is essential that the device fails to a stable short circuit.
F. Wakeman, J. Pitman, S. Steinhoff
openaire   +1 more source

A Method for Sensing the Internal Current Distribution State of Press-Pack IGBT Devices Based on Hall Sensors

Electronics
Flexible DC transmission technology is an important support for constructing new power systems. The press-pack IGBT device has the advantages of double-sided heat dissipation and high power density in series and is the core device in the flexible HVDC ...
Xi Yuan, Yirun Ji, Wenqian Yuan, Qing Huai, Zhen Hao, Zhonghao Dongye   +5 more
semanticscholar   +1 more source

Simulation Analysis of Press-Pack IGBT Modules with Embedded Phase Change Material

2025 IEEE 3rd International Conference on Power Science and Technology (ICPST)
The dynamic grid support capability of a VSC- HVDC system depends on the converter's maximum allowable current. This paper proposes an integrated method for utilizing phase change materials in press-pack IGBT modules.
Duanjiao Li, Yu Liao, Xiaohan Zhong, Huaping Jiang, Xiaoguang Zheng, Jianming Liu   +5 more
semanticscholar   +1 more source

3-Level high power converter with press pack IGBT

2007 European Conference on Power Electronics and Applications, 2007
Converteam recently has introduced the MV7000 series of medium voltage drives, designed with Press Pack IGBT (PPI) in 3-level NPC topology in the power range from 4 MW to 32 MW [3]. PPI combines the benefits of disk type device technology with state-of-the-art semiconductor technology.
Roland Jakob, Christian Keller, Georg Mohlenkamp, Bernard Gollentz   +3 more
openaire   +1 more source

Study on Thermal Resistance Performance of Press-Pack IGBT Modules

2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET)
As an emerging power electronic device, Press-Pack IGBTs (PP-IGBT) are widely used in high-voltage DC transmission applications, but the thermal resistance modeling and parameter analysis of such devices are still unclear. This paper takes the 4500V/800A
Kai Ma, Qing GUo, Yangyi Shen, Hai Lin, Junming Zhang, Ying Li, Yue Quan, Lingqi Tan   +7 more
openaire   +2 more sources

A Method for Assessing the State of Ejector Pins in Press-Pack IGBT Devices Based on Current Distribution Inversion

International Conference on Performance Engineering
Press-pack IGBT devices are core components of flexible HVDC transmission equipment. The equilibrium of internal multi-chip parallel stress distribution directly determines the operational reliability of the equipment.
Xin Chen, Ran Yao, Hui Li, Peng Yang, Xinrui Chen, Wei Lai   +5 more
semanticscholar   +1 more source

An Improved Evaluation Method for the Short-Circuit Withstand Capability of Press-Pack IGBT Modules

IEEE Transactions on Electron Devices
The short-circuit withstand capability (SCWC) of the press-pack insulated gate bipolar transistor (IGBT) module (PP-IGBT) was investigated, and its evaluation method was proposed, taking into account the effects of clamping force and temperature on the ...
Renkuan Liu, Hui Li, Ran Yao, Siyu Chen, X. Luo, Wei Lai, Xianping Chen, Hongtao Tan, Bailing Zhou   +8 more
semanticscholar   +1 more source

Optimization of the thermal contact resistance within press pack IGBTs

Microelectronics Reliability, 2017
Abstract The research of thermal contact resistance between multi-layers within press pack IGBTs (PP IGBTs) is significant for optimizing the PP IGBTs' thermal resistance to improve reliability, as the thermal contact resistance accounts for approximately 50% of the total thermal resistance of PP IGBTs.
Erping Deng, Zhibin Zhao, Peng Zhang, Yongzhang Huang, Jinyuan Li   +4 more
openaire   +1 more source

15kV Press Pack SiC IGBT

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021
Yujie Du, Xinling Tang, Liang Wang, Zhibin Zhao, Xiaolei Yang, Fei Yang, Junmin Wu   +6 more
openaire   +1 more source