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Location optimize of press-pack IGBT chip
2019 20th International Conference on Electronic Packaging Technology(ICEPT), 2019In this work, we optimize the chip's location of press-pack IGBT from the point of view of multiple physical fields. First, based on the actual structure of the press-pack IGBT device, the multiple physical field model was established to analyze of Electro-thermal-mechanical coupling model by finite element method.
Yang Liu +6 more
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International Vacuum Electronics Conference, 2023
In this paper, based on the finite element simulation, the short-circuit process of press-pack IGBT modules (PP-IGBT) with various optimized package structures are compared and analyzed, and the effect of package structure design on the short-circuit ...
Renkuan Liu +5 more
semanticscholar +1 more source
In this paper, based on the finite element simulation, the short-circuit process of press-pack IGBT modules (PP-IGBT) with various optimized package structures are compared and analyzed, and the effect of package structure design on the short-circuit ...
Renkuan Liu +5 more
semanticscholar +1 more source
Insulation Simulation Analysis of Press-Pack IGBT
2019 IEEE 3rd International Electrical and Energy Conference (CIEEC), 2019In high voltage applications such as power grid and rail transportation, IGBT devices generally operate under very harsh conditions, which places high demands on device reliability. In this paper, the electric field distribution of silicon chip termination area and press-pack IGBT package structure under high voltage reverse bias experimental ...
Yuzhe Liu +4 more
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Simulation of Press-Pack IGBT Unit in Phase Change Cooling Materials
2023 6th International Conference on Energy, Electrical and Power Engineering (CEEPE), 2023Phase change cooling technology has gradually become a solution to the heat dissipation bottleneck of high-voltage power electronic devices. The research object of this paper is the press-pack IGBT unit.
Qing Li, Liming Wang, F. Yin
semanticscholar +1 more source
Overview of pressure measurement methods in press pack IGBTs
IET Conference Proceedings, 2021Press pack IGBTs (PP IGBTs) have been widely used in various types of high-voltage and large-capacity power converters and control equipment in smart grids. The measurement method research of the multi-physical parameters in press pack IGBTs is beneficial to solve the multi-physical coupling problems involved, guide the design of more effective device ...
Z. Chen, Y. Li, M. Cui, X. Yang
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An Improved Thermal Network Model of Press-Pack IGBT Modules Considering Contact Surface Damage
IEEE transactions on device and materials reliability, 2023As the power density of press-pack insulated gate bipolar transistor (PP-IGBT) modules increases, establishing a thermal analysis model to provide thermodynamic information for PP-IGBT modules under service conditions is crucial for reliability design ...
F. Qin, Yakun Zhang, Tong An, Rui Zhou
semanticscholar +1 more source
Possible failure modes in Press-Pack IGBTs
Microelectronics Reliability, 2015Abstract Reliability of Press-Pack IGBTs is a topic with limited published data and information. This paper presents results of a power cycling test with state-of-the-art high power devices. An accelerated lifetime test scheme was defined, and six out of eight devices were tested until failure.
Lukas Tinschert +5 more
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Analysis for thermal contact resistance of Press-Pack IGBTs
2021 22nd International Conference on Electronic Packaging Technology (ICEPT), 2021Press-pack insulated gate bipolar transistors (IGBT) have a multilayer structure, which is clamped by pressure. The IGBT chip generates heat and forms the temperature gradient in the multilayer structure during work. Due to different coefficient of thermal expansion of multilayer structure, temperature and clamping force will lead constant changes in ...
Yakun Zhang +4 more
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IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023
Press-pack insulated gate bipolar transistors (PP-IGBTs) modules have become the mainstream choice in high-power-density applications such as breakers. Sufficient short-circuit (SC) withstand capacity is the key to the safe operation of power electronic ...
Renkuan Liu +9 more
semanticscholar +1 more source
Press-pack insulated gate bipolar transistors (PP-IGBTs) modules have become the mainstream choice in high-power-density applications such as breakers. Sufficient short-circuit (SC) withstand capacity is the key to the safe operation of power electronic ...
Renkuan Liu +9 more
semanticscholar +1 more source
Thermo-Mechanical Simulation Of A Multichip Press-Packed Igbt
MRS Proceedings, 1997AbstractThe reliability of press-packed integrated gate bipolar transistors (IGBT) depends on satisfactory contact conditions applied at assembly stage and mantained throughout the service life. The objective of this work is the simulation of the thermo-structural behavior of a multichip IGBT during initial assembly and subsequent uniform thermal ...
PIRONDI, Alessandro +5 more
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