Results 171 to 180 of about 1,354,843 (287)

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun   +15 more
wiley   +1 more source

A low-cost arduino-based pulsed constant-current platform for electrochemical nanostructure synthesis. [PDF]

open access: yesHardwareX
Luna Cervantes M   +11 more
europepmc   +1 more source

High‐Performance Solar‐Blind Photodetectors Enabled by Post‐Annealing Optimization of Solution‐Processed Ga2O3 Films

open access: yesAdvanced Electronic Materials, EarlyView.
Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan   +10 more
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo   +7 more
wiley   +1 more source

Sputtering: A Versatile Technology to Deposit Multifunctional Protective Coatings. [PDF]

open access: yesMaterials (Basel)
Figueiredo NM   +4 more
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Advances and Challenges in Pulsed Lasers Based on Low-Dimensional Material Saturable Absorbers. [PDF]

open access: yesNanomaterials (Basel)
Zhang W   +7 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy