Results 181 to 190 of about 1,354,843 (287)

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Advances in Doping Modification and Processing of Diamond-like Carbon Coatings: A Review. [PDF]

ACS Omega
Zhang Z, Jo B, Chen W, Mularso KT, Jung HS.   +4 more
europepmc   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Pulsed-Laser-Deposited LiMn₂O₄ Thin-Film Solid-State Microbatteries with Extended Voltage Window Cycling. [PDF]

ACS Appl Energy Mater
Gonzalez-Rosillo JC, Morzy J, Romanyuk YE, Futscher MH, Tarancón A, Morata A.   +5 more
europepmc   +1 more source

Anion‐Cation Synergistic Passivation for High‐Performance FA‐Cs Halide Perovskite Photodetectors

Advanced Electronic Materials, EarlyView.
An anion‐cation synergistic passivation strategy is developed to improve perovskite photodetectors. Surface‐localized DMePDA2+ cations and bulk‐diffused Cl− anions simultaneously reduce defects, enhancing charge transport and suppressing recombination.
Hyeon‐Jong Shin, Kwang‐Ro Yun, Tae Joon Park, Tae‐Yeon Seong   +3 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Thermoelectric, magnetotransport, and ultrafast dynamics of bismuth telluride thin films grown using pulsed laser deposition: effects of substrate temperature and post-annealing. [PDF]

Sci Technol Adv Mater
Tuyen LTC, Lou BS, Lee JW, Uyen NN, Le PH, Liao CN, Luo CW, Lin JY.   +7 more
europepmc   +1 more source

Stabilization of Ultrafast Domain Wall Motion by Edge‐Anisotropy Engineering in Ferrimagnetic Nanowires

Advanced Electronic Materials, EarlyView.
Localized laser annealing transforms distorted, edge‐pinned domain‐wall motion in ferrimagnetic Pt/GdFe nanowires into straight, stable, and ultrafast propagation. Experiments and micromagnetic simulations reveal an optimum anisotropy‐engineering window in which moderate edge softening suppresses pinning, whereas excessive anisotropy reduction or ...
Mojtaba Mohammadi, Sina Ranjbar, Yoshinobu Nakatani, Benjamin Lilienthal‐Uhlig, Kenji Tanabe, Hiroyuki Awano   +5 more
wiley   +1 more source

Microstructurally optimizing the mid-infrared optical modulation properties of vanadium oxide thin films <i>via</i> magnetron sputtering and subsequent annealing. [PDF]

RSC Adv
Jin S, Dong N, Yan Z, Ji J, Yu W, Wang J.   +5 more
europepmc   +1 more source

Germanium Crystal Undulator Realization through Pulsed Laser Melting Technique

Crystal-based undulators are breakthrough devices for developing new gamma-ray light sources. Operating at photon energies ranging from 100 keV to several tens of MeV, they offer a promising approach to high-brilliance gamma-ray generation. By exploiting
Francesco Sgarbossa, Davide De Salvador, Gianluigi Maggioni, Filippo Nicolasi, Davide Valzani, Alexei Sytov, Laura Bandiera, Chiara Carraro   +7 more
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