Results 41 to 50 of about 1,354,843 (287)
Porous Ultralow-κ sp<sup>2</sup>-Bonded Boron Nitride Thin Films as Copper Diffusion Barriers. [PDF]
Porous sp2‐bonded boron nitride (p‐BN) thin films with an ultralow dielectric constant (κ = 1.77) are directly grown on Si substrates via RF magnetron sputtering. The films feature uniform nanopores (1.85 nm), high mechanical stability, hydrophobicity, and excellent Cu diffusion barrier performance even at 3 nm thickness, offering a promising solution ...
Liu C +11 more
europepmc +2 more sources
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Utilizing pulsed lasers in favor of a continuous wave in laser beam welding is a well-established method to achieve higher process efficiency and reduce heat input into the workpiece, which is especially useful for thin-walled workpieces (Steen, 2005 ...
M. Troise +3 more
doaj +1 more source
Influence of a pulsed laser regime on surface finish induced by thedirect metal deposition process on a Ti64 alloy [PDF]
tThe direct metal deposition (DMD) laser technique is a free-form metal deposition process, which allowsgenerating a prototype or small series of near net-shape structures.
GORNY, Cyril +7 more
core +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
β-Ga2O3 is a promising ultrawide-bandgap semiconductor for next-generation power electronics and deep-ultraviolet optoelectronics, but its epitaxial growth generally requires substrate temperatures above 600 °C or post-annealing.
Yoon-Young Huh +2 more
doaj +1 more source
Physical Vapor Deposition of Cathode Materials for All Solid-State Li Ion Batteries: A Review
With the development of smart electronics, a wide range of techniques have been considered for efficient co-integration of micro devices and micro energy sources.
Berik Uzakbaiuly +7 more
doaj +1 more source
Growth optimisation and laser processing of thin film phosphors for electroluminescent displays [PDF]
This thesis presents results of a study of ZnS:Mn thin film phosphors used in Thin Film ELectroluminescent (TFEL) and Laterally Emitting TFEL (LETFEL) devices, examining techniques for phosphor growth optimisation and post deposition processing in order ...
Boutaud, G
core
The effect of relative plasma plume delay on the properties of complex oxide films grown by multi-laser multi-target combinatorial pulsed laser deposition [PDF]
We report the effects of relative time delay of plasma plumes on thin garnet crystal films fabricated by dual-beam, combinatorial pulsed laser deposition.
May-Smith, Timothy C. +3 more
core +1 more source
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source

