Results 251 to 260 of about 27,266 (287)

Amplitudes of random telegraph noise in HTSC thin films

Physica B: Condensed Matter, 1994
Abstract Amplitudes of Random Telegraph Voltage Noise in YBaCuO and BiSrCaCuO thin films of different microstructures have been investigated. Telegraph voltage noise originates from thermally activated flux jumps converted into voltage signals by means of intrinsic Josephson junction cluster acting as a dc SQUID.
BONALDI M, JUNG G, SAVO B, VECCHIONE A, VITALE, S   +5 more
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Statistical Model for Random Telegraph Noise in Flash Memories

IEEE Transactions on Electron Devices, 2008
This paper presents a new physics-based statistical model for random telegraph noise in Flash memories. From the probabilistic superposition of elementary Markov processes describing the trapping/detrapping events taking place in the cell tunnel oxide, the model can explain the main features of the random telegraph noise threshold-voltage instability ...
MONZIO COMPAGNONI, CHRISTIAN, GUSMEROLI, RICCARDO, SOTTOCORNOLA SPINELLI, ALESSANDRO, LACAITA, ANDREA LEONARDO, M. BONANOMI, A. VISCONTI   +5 more
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Gate Delay Variability due to Random Telegraph Noise

2021 35th Symposium on Microelectronics Technology and Devices (SBMicro), 2021
Stochastic timing variations are a major concern in nanometric CMOS logic gates. Addressing the time-zero fluctuations due to variability of physical dimensions and doping profiles, which remain static over time, as well as the time-dependent fluctuations, such as Random Telegraph Noise (RTN), is, therefore, imperative for proper circuit design.
Rodolfo G. Barbosa, Thiago H. Both, Gilson Wirth   +2 more
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Random telegraph noise in carbon nanotubes and peapods

Current Applied Physics, 2006
Abstract The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs) and C60-filled SWNTs (the so-called peapods). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature.
Jhang, S., Lee, S., Lee, D., Yu, H., Dettlaff, U., Campbell, E., Roth, S., Park, Y.   +7 more
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Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018
We present a systematic investigation of random dopant fluctuations and random telegraph noise instabilities in Nanowire and Macaroni MOSFETs via 3D atomistic Monte Carlo simulations. We discuss their dependence on geometry and doping and show that different trends appear with respect to planar devices. Some unexpected results are explained in terms of
A. Sottocornola Spinelli, C. Monzio Compagnoni, A. L. Lacaita   +2 more
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Modeling statistical distribution of random telegraph noise magnitude

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011
Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point.
Ken'ichiro Sonoda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Inoue   +3 more
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Random telegraph noise (RTN) in scaled RRAM devices

2013 IEEE International Reliability Physics Symposium (IRPS), 2013
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution.
D. Veksler, G. Bersuker, VANDELLI, LUCA, PADOVANI, ANDREA, LARCHER, Luca, A. Muraviev, B. Chakrabarti, E. Vogel, D. C. Gilmer, P. D. Kirsch   +9 more
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Random telegraph noise: Measurement, data analysis, and interpretation

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2017
In this paper, we delve into one of the most relevant defects-related phenomena causing failures in the operation of modern nanoscale electron devices, namely Random Telegraph Noise (RTN). Due to its detrimental impact on devices and circuits performances, RTN mechanism must be thoroughly understood, which requires establishing a self-consistent ...
PUGLISI, Francesco Maria, PADOVANI, ANDREA, LARCHER, Luca, PAVAN, Paolo   +3 more
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Random Telegraph Noise in Analog CMOS Circuits

IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
Mauricio Banaszeski da Silva, Gilson I. Wirth, Hans P. Tuinhout, Adrie Zegers-van Duijnhoven, Andries J. Scholten   +4 more
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The Stochastic Origin of Random Telegraph Noise

Fluctuation and Noise Letters
Lately, Random Telegraph Noise (RTN) has been deemed, via specific mathematical metrics, to be possibly deterministic-chaotic rather than stochastic, with severe implications for applications that leverage on the RTN stochastic nature. Yet, this was claimed by analyzing a limited number of RTN traces.
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