Results 31 to 40 of about 27,266 (287)

Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system [PDF]

Iranian Journal of Astronomy and Astrophysics, 2017
We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes.
Hakimeh Jaghouri, Samira Nazifkar
doaj   +1 more source

An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

IEEE Journal of the Electron Devices Society, 2018
In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward
E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng   +7 more
doaj   +1 more source

RTS noise impact in CMOS image sensors readout circuit [PDF]

, 2010
CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre, Martin-Gonthier, Philippe   +1 more
core   +1 more source

Telegraph noise effects on two charge-qubits in double quantum dots

, 2013
We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor.
Ayachi, A., Bennaceur, R., Chouikha, W. Ben, Jaziri, S.   +3 more
core   +1 more source

Random-telegraph-noise by resonant tunnelling at low temperatures [PDF]

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low ...
Z. Li, M. Sotto, F. Liu, M. K. Husain, I. Zeimpekis, H. Yoshimoto, K. Tani, Y. Sasago, D. Hisamoto, J. D. Fletcher, M. Kataoka, Y. Tsuchiya, S. Saito   +12 more
openaire   +2 more sources

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Nanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King   +2 more
doaj   +1 more source

Quantum Size Effect transition in percolating nanocomposite films

, 2000
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC).
A. B. Pakhomov, A. B. Pakhomov, A. B. Pakhomov, A. B. Pakhomov, A. Carl, A. Carl, A. Carl, A. G. Aronov, A. Millner, B. A. Aronzon, B. Abeles, B. Aronzon, B. Aronzon, B. Aronzon, B. I. Shklovskii, B. I. Shklovskii, B. Raquet, Brouers, C. J. Adkins, C. M. Hurd, D. E. Khmelnitskii, D. J. Bergman, E. Cuevas, E. Meilikhov, E. Z. Meilikhov, G. Deitscher, I. Shlimak, J. H. Hooge, J. H. Scofield, J. Léotin, J. V. Mantese, K. K. Bardhan, K. K. Bardhan, K. K. Likharev, K. S. Ralls, L. M. Lust, M. B. Weissman, M. E. Gershenzon, M. Goiran, N. Nègre, N. Savvides, P. A. Lee, P. Dutta, P. M. Hui, P. Sheng, R. Denton, S. Honda, S. Mitani, S. T. Chui, S. Takahashi, T. Chui, U. N. Nandi, V. F. Gantmaher, V. M. Shalaev, V. Rylkov, X. N. Xing, Y. Koike   +56 more
core   +1 more source

Random telegraph noise in highly scaled nMOSFETs [PDF]

2009 IEEE International Reliability Physics Symposium, 2009
Recently, 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling.
J.P. Campbell, J. Qin, K.P. Cheung, L.C. Yu, J.S. Suehle, A. Oates, K. Sheng   +6 more
openaire   +1 more source

Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

AIP Advances, 2019
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, Maxim Tsoi   +4 more
doaj   +1 more source

Random Telegraph Signal Phenomena in Ultra Shallow p⁺n Silicon Avalanche Diodes

IEEE Journal of the Electron Devices Society, 2018
An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta   +5 more
doaj   +1 more source