Results 221 to 230 of about 946 (248)
Some of the next articles are maybe not open access.
Stress-induced leakage current and random telegraph signal
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2009Stress-induced leakage current (SILC) and random telegraph signal (RTS) in n-type metal-oxide-semiconductor field-effect-transistor (n-MOSFETs) caused by the Fowler-Nordheim tunneling stress are studied by using the author’s newly developed test pattern. MOSFETs having large RTS increase can be induced by electrical stress in parallel with the inducing
Akinobu Teramoto +8 more
openaire +1 more source
The zero-crossing interval statistics of the smoothed random telegraph signal
Information Sciences, 1977Abstract This paper presents explicit expressions for the zero-crossing interval density P o ( τ ) of the smoothed random telegraph signal (SRTS). p o ( τ ) is given by an infinite series involving the two parameters of the process. When one of these parameters assumes integer values, the series reduces to a finite summation. From this result,
openaire +2 more sources
Characterization of Random Telegraph Signal Effects for 0.18um Technology
ECS Transactions, 2011The paper gives a summary of RTS noise data captured from 0.18um technology. It can be a reference for the channel area and voltage bias selection for RTS measurement.
Yuanqian Ji +5 more
openaire +1 more source
Measurement and Analysis Methods for Random Telegraph Signals
2006Large-area device noise models are based on ensemble averaging techniques. Typically, the physical mechanisms leading to fluctuations of microscopic entities, such as charge carrier number or mobility can be modeled by connecting these fluctuations to noise in a measurable device parameter, such as voltage or current. In the process, ensemble averaging
openaire +1 more source
Manipulation of the random telegraph signals for quantum random number generation [PDF]
, 2019 The random telegraph signals (RTSs) has become a serious reliability issue during the scaling of the CMOS technology. From the fundamental physics point of view, the RTS is generated by the defects at the Si/SiO2 interface or in the gate oxide layer, they can not be eliminated completely.
openaire
Investigation of random telegraph signal in CMOS image sensors irradiated by protons.
Journal of Nuclear Science and Technology, 2021Bingkai Liu, Yudong Li, Lin Wen
exaly
Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs
2002With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide.
Kolhatkar, Jay +2 more
openaire +1 more source
Random Telegraph Signals in Semiconductor Devices
2016Eddy Simoen, Cor Claeys
openaire +1 more source