Results 241 to 250 of about 31,302 (278)

Bloch equations driven by a random telegraph signal

Journal of Magnetic Resonance (1969), 1985
Abstract Input-output cross-correlations are derived for the Bloch equations driven by a sinusoid near the Larmor frequency with random telegraph binary amplitude modulation. The correlations decrease with time as a superposition of four exponential functions.
William R Knight, R Kaiser
openaire   +1 more source

Probability Densities of the Smoothed ‘ Random Telegraph Signal ’†

Journal of Electronics and Control, 1958
ABSTRACT The problem treated is that of finding the probability distribution of the output from a simple resistance-capacity smoothing network when the input is a sequence of random square waves generated by a Poisson process. The moments of the first probability distribution are obtained and the density function derived.
W. M. WONHAM, A. T. FULLER
openaire   +1 more source

GRT model for random telegraph signals in MOSFETS

AIP Conference Proceedings, 1999
This paper investigates the emission and capture kinetics of random telegraph signals (RTS) in MOSFETs. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, followed by a tunneling process of the trapped carrier between the interface trap and a trap located in the SiO2 layer. In this
J. Sikula, P. Vasina, R. Kolarova, J. Pavelka, C. Clayes, E. Simoen, J. Brini, G. Kamarinos   +7 more
openaire   +1 more source

Microwave Induced Effects on the Random Telegraph Signal in a MOSFET

AIP Conference Proceedings, 2005
We study the random telegraph signal (RTS) due to defects at the Si/SiO2 interface of a MOSFET in a microwave field. We observe the change of the characteristic times of the RTS by monitoring the drain current in such device operated under microwave irradiation and the change of the emission/capture time ratio.
Prati, Enrico, Fanciulli, Marco, Ferrari, Giorgio, Sampietro, Marco, Fantini, Paolo   +9 more
  +6 more sources

Random Telegraph Signals and Noise Behaviors in Carbon Nanotube Transistors

2006 64th Device Research Conference, 2006
A random telegraph signal appears at a smaller absolute gate bias for a larger absolute drain-source bias in a carbon nanotube transistor. Its mechanism is attributed to a defect located in the drain side of the Schottky barrier carbon nanotube transistor with Ti∕Au as contact material. Furthermore, room temperature random telegraph signal is presented
Fei Liu, Kang L. Wang, Daihua Zhang, Chongwu Zhou   +3 more
openaire   +1 more source

Statistical geometry of the smoothed random telegraph signal†

International Journal of Control, 1972
A study is made of various statistical properties of a particular non-Gaussian process, the low-pass filtered random telegraph signal. Results are obtained for the distribution of slope, the average numbers of zero and level crossings, the average number of crossings with a straight line, distributions of maxima and minima and the average number of ...
openaire   +1 more source

Model for random telegraph signals in sub-micron MOSFETS

Solid-State Electronics, 2003
Abstract Random telegraph signals (RTS) are two or more level switching events observed at the drain current or voltage of a MOSFET, which originate from the traps at the Si/SiO2 interface through the process of capture and emission of charge carriers.
Nuditha Vibhavie Amarasinghe, Zeynep Çelik-Butler, Anna Zlotnicka, Fang Wang   +3 more
openaire   +1 more source

Random Telegraph Signal in Monolithic Active Pixel Sensors

2008 IEEE Nuclear Science Symposium Conference Record, 2008
CMOS Monolithic Active Pixel Sensors (MAPS) technology allows integrating very small sensing elements with a pixel pitch of ∼ 10 μm together with analogue and digital signal processing circuits into a monolithic chip, which may be thinned down to a thickness of ∼ 50 μm.
M. Deveaux, S. Amar-Youcef, A. Budenbender, D. Doering, I. Frohlich, C. Muntz, J. Stroth, F. M. Wagner   +7 more
openaire   +1 more source

Random telegraph signals in deep submicron n-MOSFET's

IEEE Transactions on Electron Devices, 1994
Random telegraph signals (RTS) in the drain current of deep-submicron n-MOSFET's are investigated at low and high lateral electric fields. RTS are explained both by number and mobility fluctuations due to single electron trapping in the gate oxide. The role of the type of the trap (acceptor or donor), the distance of the trap from the Si-SiO/sub 2 ...
null Zhongming Shi, J.-P. Mieville, M. Dutoit   +2 more
openaire   +1 more source

Random telegraph signals in accumulation-mode SOI/nMOSFETs

IEEE Electron Device Letters, 1994
Random telegraph signals (RTS's) arising from interfacial defects in small accumulation-mode SOI/nMOSFETs have been studied. By analyzing the average capture time of each RTS as a function of both the front-gate and back-gate voltages, the authors are able to distinguish between defects at the front interface from those at the back interface.
null Ming-Horn Tsai, null Binglong Zhang, null Tso-Ping Ma, L.K. Wang   +3 more
openaire   +1 more source