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Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs

2002
With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide.
Kolhatkar, Jay   +2 more
openaire   +1 more source

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor After Proton Irradiation

IEEE Transactions on Nuclear Science, 2022
Aubin ANTONSANTI   +2 more
exaly  

Random Telegraph Signal: a local probe for single point defect studies in solid-state devices

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2002
C Claeys
exaly  

Chaotic intermittency as a random telegraphic signal

Chaos, Solitons & Fractals
Sergio Elaskar   +5 more
openaire   +1 more source

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

IEEE Transactions on Nuclear Science, 2018
Clémentine Durnez   +2 more
exaly  

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