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Analysis of 'Switched Biased' Random Telegraph Signals in MOSFETs
2002With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mobile charge carriers in the channel in traps located at the Si- SiO2 interface or in the oxide.
Kolhatkar, Jay +2 more
openaire +1 more source
Random Telegraph Signal: a local probe for single point defect studies in solid-state devices
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2002C Claeys
exaly
Chaotic intermittency as a random telegraphic signal
Chaos, Solitons & FractalsSergio Elaskar +5 more
openaire +1 more source
Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude
IEEE Transactions on Electron Devices, 2007exaly
Measurements of Random Telegraph Signal in CCDs Irradiated With Protons and Neutrons
IEEE Transactions on Nuclear Science, 2006exaly

