Results 251 to 260 of about 31,302 (278)

Investigation of Random Telegraph Signal with PD SOI MOSFETs

ECS Transactions, 2012
A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (ID-RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current
Ching-En Chen, Ting-Chang Chang, Hung-Ping Lo, Szu-Han Ho, Wen-Hung Lo, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang   +7 more
openaire   +1 more source

Stress-induced leakage current and random telegraph signal

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2009
Stress-induced leakage current (SILC) and random telegraph signal (RTS) in n-type metal-oxide-semiconductor field-effect-transistor (n-MOSFETs) caused by the Fowler-Nordheim tunneling stress are studied by using the author’s newly developed test pattern. MOSFETs having large RTS increase can be induced by electrical stress in parallel with the inducing
Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi   +8 more
openaire   +1 more source

The zero-crossing interval statistics of the smoothed random telegraph signal

Information Sciences, 1977
Abstract This paper presents explicit expressions for the zero-crossing interval density P o ( τ ) of the smoothed random telegraph signal (SRTS). p o ( τ ) is given by an infinite series involving the two parameters of the process. When one of these parameters assumes integer values, the series reduces to a finite summation. From this result,
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Characterization of Random Telegraph Signal Effects for 0.18um Technology

ECS Transactions, 2011
The paper gives a summary of RTS noise data captured from 0.18um technology. It can be a reference for the channel area and voltage bias selection for RTS measurement.
Yuanqian Ji, Sutter Dai, Minxia Wei, Xiangdang Lu, Sunny Zhang, Daniel Xu   +5 more
openaire   +1 more source

Measurement and Analysis Methods for Random Telegraph Signals

2006
Large-area device noise models are based on ensemble averaging techniques. Typically, the physical mechanisms leading to fluctuations of microscopic entities, such as charge carrier number or mobility can be modeled by connecting these fluctuations to noise in a measurable device parameter, such as voltage or current. In the process, ensemble averaging
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Manipulation of the random telegraph signals for quantum random number generation [PDF]

, 2019
The random telegraph signals (RTSs) has become a serious reliability issue during the scaling of the CMOS technology. From the fundamental physics point of view, the RTS is generated by the defects at the Si/SiO2 interface or in the gate oxide layer, they can not be eliminated completely.
openaire  

Investigation of random telegraph signal in CMOS image sensors irradiated by protons.

Journal of Nuclear Science and Technology, 2021
Yudong Li, Xiang Zhang, Qi Guo
exaly  

Random telegraph signal phenomenology

2016
Eddy Simoen, Cor Claeys
openaire   +1 more source

Filtering random telegraph signal

2018
Shilpi Singh, Mannila, Elsa, Golubev, Dmitry, Peltonen, Joonas, Pekola, Jukka   +4 more
openaire   +1 more source

Random Telegraph Signals in Semiconductor Devices

2016
Eddy Simoen, Cor Claeys
openaire   +1 more source