Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor. [PDF]
Sensors (Basel), 2018 A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise.
Ishida H +7 more
europepmc +3 more sources
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor. [PDF]
Sensors (Basel), 2023 In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Chao CY +6 more
europepmc +2 more sources
Human Breast Cancer Cells Demonstrate Electrical Excitability. [PDF]
Front Neurosci, 2020 Breast cancer is one of the most prevalent types of cancers worldwide and yet, its pathophysiology is poorly understood. Single-cell electrophysiological studies have provided evidence that membrane depolarization is implicated in the proliferation and ...
Ribeiro M +6 more
europepmc +2 more sources
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]
, 2003 In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M. +3 more
core +4 more sources
Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes <sup>†</sup>. [PDF]
Sensors (Basel)This work presents a monolithically integrated short-wavelength infrared (SWIR) image sensor based on indium arsenide (InAs) quantum dot photodiodes (QDPDs).
Chu M +22 more
europepmc +2 more sources
Activation Energy of RTS Noise [PDF]
Radioengineering, 2011 Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was analyzed in order to obtain new ...
J. Pavelka +3 more
doaj +2 more sources
RTS noise and dark current white defects reduction using selective averaging based on a multi-aperture system. [PDF]
Sensors (Basel), 2014 In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white ...
Zhang B +5 more
europepmc +2 more sources
Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors [PDF]
International Conference on Noise and Fluctuations, 2017 This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved.
Durnez, Clémentine +5 more
core +2 more sources
Anomalous Random Telegraph Signal in Suspended Graphene with Oxygen Adsorption: Implications for Gas Sensing [PDF]
ACS Applied Nano Materials, 2023 Graphene is a promising material for sensing applications because of its large specific surface area and low noise. In many applications, graphene will inevitably be in contact with oxygen since it is the second most abundant gas in the atmosphere ...
Alexandro de Moraes Nogueira +4 more
semanticscholar +1 more source
Visualisation Techniques for Random Telegraph Signals in MOSFETs [PDF]
, 2004 In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced.
Hoekstra, Erik +4 more
core +15 more sources