Results 11 to 20 of about 2,718 (178)
Noise Suppression in Organic Photodiodes: A Comprehensive Review of Mechanistic Insights and Design Principles. [PDF]
SmallOrganic photodiodes are limited by dark current and excess low‐frequency noise. This review synthesizes mechanisms of noise, links to three leakage pathways, and unifies measurement practice with device design. By outlining energetics, morphology, and interface strategies, it provides validated routes to lower noise floors and higher detectivity across
Lee GM, Kim TH, Kim Y, Shim JW.
europepmc +2 more sources
IEEE Photonics Journal, 2022 Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang +5 more
doaj +1 more source
Neuromodulation: Technology at the Neural Interface, EarlyView., 2021 Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke +9 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2021 It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao +7 more
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IEEE Journal of the Electron Devices Society, 2020 The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
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Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
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RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj +1 more source
Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
IEEE Journal of the Electron Devices Society, 2015 Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj +1 more source
RTS noise reduction of CMOS image sensors using amplifier-selection pixels [PDF]
, 2013 This paper describes a RTS (random telegraph signal) noise reduction technique for an active pixel CMOS image sensor (CIS) with in-pixel selectable dual source-follower amplifiers.
Kagawa, Kiichiro +4 more
core +1 more source