Results 21 to 30 of about 2,718 (178)
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
Havard, E. +2 more
core +1 more source
Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]
, 2007 In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric +7 more
core +3 more sources
Residual fixed pattern noise and random telegraph signal noise of a MWIR T2SL focal plane array
Defense + Commercial Sensing, 2019 Stability over time has recently become a figure of merit of major importance to compare the performances of infrared focal plane arrays (FPA) of different technologies.
I. Ribet-Mohamed +7 more
semanticscholar +1 more source
Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
AIP Advances, 2019 We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson +4 more
doaj +1 more source
Noise Predictions for STM in Systems with Local Electron Nematic Order [PDF]
, 2010 We propose that thermal noise in local stripe orientation should be readily detectable via STM on systems in which local stripe orientations are strongly affected by quenched disorder. Stripes, a unidirectional, nanoscale modulation of electronic charge,
Carlson, E. W. +2 more
core +3 more sources
IEEE Journal of the Electron Devices Society, 2019 The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao +8 more
doaj +1 more source
Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology [PDF]
, 2009 A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18um ...
Bernard, Frédéric +5 more
core +1 more source
Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated.
Sung-Kyu Kwon +11 more
doaj +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
core +1 more source
IEICE Electronics Express, 2017 The random telegraph signal (RTS) noise causes important reliability issues. Complex RTS noise is frequently observed by more than two traps. Originally, it is supposed that the capture and emission between these two traps proceed independently.
Y. Son, Yoon Kim, Myounggon Kang
semanticscholar +1 more source