Results 41 to 50 of about 2,718 (178)

Novel method to optimize the column random telegraph signal performance in CMOS image sensor

open access: yesIEICE Electronics Express, 2019
We present a methodology to define and distinguish the column random telegraph noise (RTS) derived from column bitline bias and comparator input transistors only based on the digital output data of each pixel.
Pengyu Liu   +3 more
semanticscholar   +1 more source

Digital Response Test in Epilepsy assesses interictal epileptiform discharge effects in real time

open access: yesEpilepsia, Volume 67, Issue 1, Page 381-395, January 2026.
Abstract Objective Interictal epileptiform discharges (IEDs) in people with epilepsy (PWE) can impair cognitive functions and increase reaction time (RT) and the likelihood of missed reactions. These effects are not routinely assessed, because reliable methods for detecting IEDs of variable appearance in real time and suitable tests to measure IED ...
Andreas von Allmen   +10 more
wiley   +1 more source

In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]

open access: yes, 2012
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent   +2 more
core   +1 more source

Optimal Parameter Extraction of Three‐Diode Photovoltaic Model Using the Hybrid Golden Jackal Optimizer With Fitness Distance Balance Mechanism and Berndt‐Hall‐Hall‐Hausman Method

open access: yesEnergy Science &Engineering, Volume 13, Issue 12, Page 6471-6496, December 2025.
Optimal parameter extraction of three‐diode photovoltaic model using the hybrid golden jackal optimizer with fitness distance balance mechanism and Berndt‐Hall‐Hall‐Hausman method. ABSTRACT Accurate simulation and operation of photovoltaic (PV) systems depend on reliable extraction of model parameters from experimental data.
Muthuramalingam Lakshmanan   +3 more
wiley   +1 more source

Proton irradiation of e2v technologies L3Vision devices [PDF]

open access: yes, 2005
This paper describes the proton irradiation and subsequent analysis of 8 e2v technologies CCD65 L3Vision devices with the intention of assessing the suitability of L3Vision technology to applications in space.
Holland, AD, Smith, DR
core   +1 more source

Tracking Mooring Lines of Floating Structures by an Autonomous Underwater Vehicle

open access: yesJournal of Field Robotics, Volume 42, Issue 8, Page 4589-4608, December 2025.
ABSTRACT This study presents a novel method for tracking mooring lines of Floating Offshore Wind Turbines (FOWTs) using an Autonomous Underwater Vehicle (AUV) equipped with a tilt‐controlled Multibeam Imaging Sonar (MBS). The proposed approach enables the AUV to estimate the 3D positions of mooring lines and safely track them in real‐time, overcoming ...
Sehwa Chun   +5 more
wiley   +1 more source

Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

open access: yesAdvanced Electronic Materials
High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 mm phosphate‐buffered saline solution with pH = 7.4 using transport and noise spectroscopy.
Yongqiang Zhang   +6 more
doaj   +1 more source

TEMPO at Night

open access: yesEarth and Space Science, Volume 12, Issue 10, October 2025.
Abstract The NASA Tropospheric Emissions: Monitoring of Pollution (TEMPO) instrument is hosted on a geostationary commercial communications satellite. TEMPO is an imaging spectrometer with primary mission to measure trace‐gas concentrations from the observed spectra of reflected sunlight over the Continental United States and parts of Canada, Mexico ...
James L. Carr   +14 more
wiley   +1 more source

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

open access: yes, 2011
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less
Clement, Nicolas   +3 more
core   +1 more source

Proton induced leakage current in CCDs [PDF]

open access: yes, 2003
The effect of different proton fluences on the performance of two E2V Technologies CCD47-20 devices was investigated with particular emphasis given to the analysis of 'random telegraph signal' (RTS) generation, bright pixel generation and induced changes
Ambrosi, RM   +4 more
core   +1 more source

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