Results 11 to 20 of about 72,916 (314)
17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching [PDF]
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim +12 more
doaj +2 more sources
A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide. [PDF]
Racka-Szmidt K +4 more
europepmc +3 more sources
Structuring of sapphire by laser-assisted methods, ion-beam implantation, and chemical wet etching [PDF]
Sapphire is an attractive material for micro- and opto-electronic systems applications because of its excellent mechanical and chemical properties. However, because of its hardness, sapphire is difficult to machine.
Buchal, C. +3 more
core +26 more sources
Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process [PDF]
“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial.
Sekhar Chandra Ray, W. F. Pong
doaj +2 more sources
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
doaj +1 more source
Advanced Etching Techniques of LiNbO3 Nanodevices
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant ...
Bowen Shen +7 more
doaj +1 more source
Exploring Strategies to Contact 3D Nano-Pillars
This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on ...
Esteve Amat +10 more
doaj +1 more source
Recently, it has been demonstrated that Silicon Carbide (SiC) membranes can be used in quantum sensing and MEMS applications. One of the important steps for the production of such membranes is the removal of the substrate material in order to form ...
Mahsa Mokhtarzadeh +3 more
doaj +1 more source
Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements
After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase in ...
Qingzhi Li +4 more
doaj +1 more source
Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device ...
Jin Soo Park +7 more
doaj +1 more source

