Precision micro-mechanical components in single crystal diamond by deep reactive ion etching. [PDF]
The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems.
Toros A+5 more
europepmc +2 more sources
Freestanding nanostructures via reactive ion beam angled etching
Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk ...
Haig A. Atikian+7 more
doaj +2 more sources
Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond [PDF]
Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in
Ling Xie+3 more
openalex +3 more sources
Formation of broadband antireflective and superhydrophilic subwavelength structures on fused silica using one-step self-masking reactive ion etching. [PDF]
Fused silica subwavelength structures (SWSs) with an average period of ~100 nm were fabricated using an efficient approach based on one-step self-masking reactive ion etching.
Ye X+7 more
europepmc +2 more sources
Etch rate optimization in reactive ion etching of epoxy photoresists
AbstractIn this paper, the influence of several reactive ion etching (RIE) process parameters on epoxy photoresist etch rates is compared and optimized. Four types of epoxies were examined: SU-8 2050, EpoCore, hardbaked and non-hardbaked EpoClad. The parameters that were tested are: O2 flow, SF6 flow, chamber pressure and RF power. For the experiments,
Maarten Driesen+2 more
openalex +3 more sources
17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching [PDF]
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim+12 more
doaj +2 more sources
Ga^+ beam lithography for nanoscale silicon reactive ion etching [PDF]
By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam ...
Chhim, B.+3 more
core +2 more sources
Numerical and experimental studies of the carbon etching in EUV-induced plasma [PDF]
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion ...
Astakhov, D. I.+8 more
core +25 more sources
A practical approach to reactive ion etching
In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such as anisotropy, loading effect, lag effect, RIE chemistries and micro-masking, followed by a brief overview of etching dielectrics (SiOx, SiNx) and crystalline Si. The second section of the paper is dedicated to etching III–V compound semiconductors where,
F. Karouta
openaire +4 more sources
Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching. [PDF]
We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion ...
Christopher A. Dirdal+5 more
semanticscholar +1 more source