Results 11 to 20 of about 106,837 (225)

Precision micro-mechanical components in single crystal diamond by deep reactive ion etching. [PDF]

open access: yesMicrosyst Nanoeng, 2018
The outstanding material properties of single crystal diamond have been at the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems.
Toros A   +5 more
europepmc   +2 more sources

Freestanding nanostructures via reactive ion beam angled etching

open access: yesAPL Photonics, 2017
Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk ...
Haig A. Atikian   +7 more
doaj   +2 more sources

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond [PDF]

open access: greenAdvances in Materials, 2018
Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in
Ling Xie   +3 more
openalex   +3 more sources

Etch rate optimization in reactive ion etching of epoxy photoresists

open access: goldProcedia Chemistry, 2009
AbstractIn this paper, the influence of several reactive ion etching (RIE) process parameters on epoxy photoresist etch rates is compared and optimized. Four types of epoxies were examined: SU-8 2050, EpoCore, hardbaked and non-hardbaked EpoClad. The parameters that were tested are: O2 flow, SF6 flow, chamber pressure and RF power. For the experiments,
Kristof Wouters   +2 more
openaire   +3 more sources

17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching [PDF]

open access: goldInternational Journal of Photoenergy, 2012
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance.
Ji-Myung Shim   +12 more
doaj   +2 more sources

A practical approach to reactive ion etching

open access: yesJournal of Physics D: Applied Physics, 2014
In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such as anisotropy, loading effect, lag effect, RIE chemistries and micro-masking, followed by a brief overview of etching dielectrics (SiOx, SiNx) and crystalline Si. The second section of the paper is dedicated to etching III–V compound semiconductors where,
F. Karouta
openaire   +4 more sources

Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching. [PDF]

open access: yesOptics Express, 2020
We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion ...
Christopher A. Dirdal   +5 more
semanticscholar   +1 more source

Stochastic antireflection structures on silicon fabricated by reactive ion etching [PDF]

open access: yesEPJ Web of Conferences, 2023
Stochastic Si nanostructures for antireflection (AR) fabricated by reactive ion etching (RIE) are presented for use in different spectral ranges. The lithography-free fabrication enables its application on highly curved surfaces. ALD-coatings of Al2O3 of
Schmelz David   +2 more
doaj   +1 more source

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas

open access: yesDoklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2022
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
doaj   +1 more source

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