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5T SRAM With Asymmetric Sizing for Improved Read Stability
IEEE Journal of Solid-State Circuits, 2011Conventional 6-transistor (6T) SRAM scaling to newer technologies and lower supply voltages is difficult due to a complex trade-off space involving stability, performance, power, and area. Local and global variation make SRAM design even more challenging. We present a 5-transistor (5T) bitcell that uses sizing asymmetry to improve read stability and to
Satyanand Nalam, Benton H. Calhoun
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Analysis and optimization for dynamic read stability in 28nm SRAM bitcells
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015The importance of the dynamic analysis for SRAM operation increases as a result of shrinking access cycle time, voltage scaling and increased process variations. In this paper, quantitative study of the dynamic read noise margin (DNM) is introduced showing the evolution from the static read noise margin (SNM) to DNM through cumulative dynamic effects ...
Ahmed T. Elthakeb +5 more
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Stabilization films for dual stripe read sensors
IEEE Transactions on Magnetics, 2000The processing and properties of different types of NiFe/stabilization films, for use in multi-track dual-stripe MR read heads, is described. The films were deposited in situ, after an etch step, using collimated deposition, and with minimal re-deposition.
S.C. Sanders, A. Tsoukatos, M.L. Watson
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Stability of varicella-zoster virus open reading frame 63
Archives of Virology, 2008The stability of varicella-zoster virus (VZV) open reading frame (ORF) 63 was analyzed by sequential passage of a virus strain in cell culture. VZV was propagated in culture for 1,206 passages. ORF63 from six passages (18, 220, 516, 730, 1060, and 1,206) was selected and sequenced.
Merry, Liu +8 more
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Self-stabilization of dynamic systems assuming only read/write atomicity
Proceedings of the ninth annual ACM symposium on Principles of distributed computing, 1990zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Shlomi Dolev, Amos Israeli, Shlomo Moran
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PVT-aware leakage reduction for on-die caches with improved read stability
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005., 2005Effectiveness of previous SRAM leakage reduction techniques vary significantly as the leakage variation gets worse with process and temperature fluctuation. This paper proposes a simple circuit technique that adaptively trades off overhead energy for maximum leakage savings under severe leakage variations.
Chris Hyung-Il Kim +3 more
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Long-Term Stability of Children's Attitudes Toward Reading
The Journal of Educational Research, 1996The long-term stability of the construct of children's attitudes toward reading was examined. One hundred eighty-nine students in Grades 1-4 completed two administrations of the Elementary Reading Attitude Survey (ERAS) following a 3-year interval. Initially, reading attitudes were relatively positive and comparable to the standardization sample for ...
Joseph C. Kush, Marley W. Watkins
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Consistency and stability of gaze behavior when reading manga
Applied Cognitive Psychology, 2023AbstractManga, a Japanese comic, conveys contextual information about underlying stories based on the expression of a mixture of textual and pictorial elements. Two experiments were designed to assess whether individuals' eye movements when reading manga were consistent, independent of the specific materials, and stable over time. Experiment 1 examined
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Back-Gate Controlled READ SRAM with Improved Stability
2005 IEEE International SOI Conference Proceedings, 2006We have presented a novel back-gate controlled UTSOI SRAM cell structure and associated design considerations. The proposed scheme offers improved stability compared with conventional 6T cell, and has less number of transistors than the conventional 10T cell.
null Jae-Joon Kim +2 more
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Stability and read/write characteristics of nano ferroelectric domains
Ferroelectrics, 2001Abstract The formation and characteristics of micron to sub-micron size domains aligned by atomic force microscope (AFM) tip in Pb(Zr, Ti)O3 (PZT) thin films are studied. The stability of the aligned domains is studied through the analysis of the retention characteristics.
No, K No, Kwangsoo +5 more
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