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A Subthreshold Symmetric SRAM Cell With High Read Stability

IEEE Transactions on Circuits and Systems II: Express Briefs, 2014
This brief introduces a differential eight-transistor static random access memory (SRAM) cell for subthreshold SRAM applications. The symmetric topology offers a smaller area overhead compared with other symmetric cells for the same stability in the read operation.
Roghayeh Saeidi   +2 more
exaly   +2 more sources

Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies [PDF]

open access: yesIEEE Journal of Solid-State Circuits, 2006
SRAM cell read stability and write-ability are major concerns in nanometer CMOS technologies, due to the progressive increase in intra-die variability and Vdd scaling. This paper analyzes the read stability N-curve metrics and compares them with the commonly used static noise margin (SNM) metric defined by Seevinck.
Wim Dehaene
exaly   +3 more sources

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