Results 261 to 270 of about 652,796 (302)
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STT-RAM read stability in DRAM operating region
2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015Spin-transfer-torque RAM (STT-RAM) is the most promising candidate for replacing DRAM while gaining an additional function of non-volatility. The relationship between rapid increase of spin-inversion current and stability of read operation (read disturbance) in the DRAM-array operating time region of less than 10 ns (i.e., "fast" region) was examined ...
H. Kazama, Takayuki Kawahara
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Ocular Dominance Stability and Reading Skill: A Controversial Relationship
Optometry and Vision Science, 2011ABSTRACT Purpose. Evidence is mixed concerning the relationship between stability of ocular dominance and reading deficits. Contrasting results may be due to the use of different tests of dominance, different samples of readers, and different scoring methods.
Fabrizio Zeri +3 more
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THE STABILITY OF BINOCULAR FIXATION DURING READING IN ADULTS AND CHILDREN
Developmental Medicine & Child Neurology, 1993SUMMARYThe authors recorded the binocular eye‐movements of children and adults while they read single words appropriate for their reading ability. Normal data were obtained from nine‐ to 11‐year‐old primary‐school children and adults, because very little is known about changes in binocular vergence during reading.
P, Cornelissen +3 more
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5T SRAM With Asymmetric Sizing for Improved Read Stability
IEEE Journal of Solid-State Circuits, 2011Conventional 6-transistor (6T) SRAM scaling to newer technologies and lower supply voltages is difficult due to a complex trade-off space involving stability, performance, power, and area. Local and global variation make SRAM design even more challenging. We present a 5-transistor (5T) bitcell that uses sizing asymmetry to improve read stability and to
Satyanand Nalam, Benton H. Calhoun
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Stabilization films for dual stripe read sensors
IEEE Transactions on Magnetics, 2000The processing and properties of different types of NiFe/stabilization films, for use in multi-track dual-stripe MR read heads, is described. The films were deposited in situ, after an etch step, using collimated deposition, and with minimal re-deposition.
S.C. Sanders, A. Tsoukatos, M.L. Watson
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Analysis and optimization for dynamic read stability in 28nm SRAM bitcells
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015The importance of the dynamic analysis for SRAM operation increases as a result of shrinking access cycle time, voltage scaling and increased process variations. In this paper, quantitative study of the dynamic read noise margin (DNM) is introduced showing the evolution from the static read noise margin (SNM) to DNM through cumulative dynamic effects ...
Ahmed T. Elthakeb +5 more
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Stability of varicella-zoster virus open reading frame 63
Archives of Virology, 2008The stability of varicella-zoster virus (VZV) open reading frame (ORF) 63 was analyzed by sequential passage of a virus strain in cell culture. VZV was propagated in culture for 1,206 passages. ORF63 from six passages (18, 220, 516, 730, 1060, and 1,206) was selected and sequenced.
Merry, Liu +8 more
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Electrical Stability (Read and Write Operations)
2011In SRAM, read and write are fundamental operations. To ensure the correct operations, the stability analysis is indispensable. In this chapter, electrical stability analysis is explained. In Sect. 3.1, the SRAM operations, read and write, are explained. In this section, the read stability, static-noise margin SNM, and the write stability are described.
Masanao Yamaoka, Yasumasa Tsukamoto
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Self-stabilization of dynamic systems assuming only read/write atomicity
Proceedings of the ninth annual ACM symposium on Principles of distributed computing, 1990zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Shlomi Dolev, Amos Israeli, Shlomo Moran
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PVT-aware leakage reduction for on-die caches with improved read stability
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005., 2005Effectiveness of previous SRAM leakage reduction techniques vary significantly as the leakage variation gets worse with process and temperature fluctuation. This paper proposes a simple circuit technique that adaptively trades off overhead energy for maximum leakage savings under severe leakage variations.
Chris Hyung-Il Kim +3 more
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