Results 151 to 160 of about 9,352 (287)

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review. [PDF]

Materials (Basel), 2020
Veerapandiyan V, Benes F, Gindel T, Deluca M.   +3 more
europepmc   +1 more source

Piezoelectric polar nanoregions and relaxation-coupled resonances in relaxor ferroelectrics [PDF]

, 2018
Ling Cai, R. Pattnaik, Joel Lundeen, J. Toulouse   +3 more
openalex   +1 more source

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1‐xO2/SiO2 Interface in Ferroelectric Field‐Effect‐Transistor

Advanced Electronic Materials, EarlyView.
A novel electrical framework separates and quantifies remote HZO/SiO2 interface traps from local Si/SiO2 traps in ferroelectric FETs. By combining three distinct measurement techniques, the methodology reveals that remote traps, amplified by a capacitive projection factor, dominate device performance.
Haneul Lee, Sujong Kim, Changhyeon Han, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong‐Ho Bae   +12 more
wiley   +1 more source

Dynamics on Microdomain-Macrodomain Transition of Relaxor Ferroelectrics [PDF]

, 2004
Dongjie Zhang, Xi Yao
openalex   +1 more source

Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity

Advanced Electronic Materials, EarlyView.
Poor long‐term retention of organic electrochemical transistor (OECT) artificial synapses with poly(3,4‐ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) have been a major obstacle for precise emulation of synaptic functions, mainly because of uncontrollable diffusion of mobile ions.
Minsub Lee, Donghee Shin, Jaehui Cheon, Sumin Lee, Chanwoo Park, Jaegyun Im, Jaegeun Lee, Jin Hong Lee, Jong S. Park, Beomjin Jeong   +9 more
wiley   +1 more source

A finite element phase field model for relaxor ferroelectrics [PDF]

, 2015
Bai‐Xiang Xu, Shuai Wang, Min Yi
openalex   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Temperature dependent spectroscopic ellipsometry and Raman scattering of PbTiO_3-based relaxor ferroelectric single crystals around MPB region

, 2015
X. L. Zhang, Jiaduo Zhu, G. S. Xu, Jinzhong Zhang, Liping Xu, Zhigao Hu, Junhao Chu   +6 more
openalex   +1 more source

Crossover from normal to diffused and relaxor ferroelectric in BaZrO3-modified (Ba0.85Ca0.15)TiO3 ceramics

, 2021
Shao Bo Chen, Jia Yang, Shu Ya Wu, Xiang Ming Chen   +3 more
openalex   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, EarlyView.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source