Results 151 to 160 of about 292,067 (328)

Designing Memristive Materials for Artificial Dynamic Intelligence

open access: yesAdvanced Intelligent Discovery, EarlyView.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

open access: yesAdvanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan   +5 more
wiley   +1 more source

Ferroelectric and Relaxor-Ferroelectric Phases Coexisting Boosts Energy Storage Performance in (Bi0.5Na0.5)TiO3-Based Ceramics [PDF]

open access: gold
Yunting Li   +8 more
openalex   +1 more source

Graph Attention Neural Networks for Interpretable and Generalizable Prediction of Janus III–Vi Van Der Waals Heterostructures

open access: yesAdvanced Intelligent Discovery, EarlyView.
A crystal graph neural network based on the attention mechanism is proposed in this work. The model dynamically weights features through the attention mechanism, enabling precise prediction of properties of material from structural features. Here, taking Janus III–VI van der Waals heterostructures as a representative case, the properties have been ...
Yudong Shi   +7 more
wiley   +1 more source

Microstructures and optical properties of relaxor ferroelectric 0.74Pb (Mg<SUB>1/3</SUB> Nb<SUB>2/3</SUB>)O<SUB>3</SUB>0.26PbTiO<SUB>3</SUB> thin films [PDF]

open access: diamond, 2012
Yue Tian   +12 more
openalex   +1 more source

Reentrant Phenomenon in Barium Titanate Zirconate-Based Relaxor Ferroelectrics. [PDF]

open access: yesSmall
Kröll E   +5 more
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

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