Results 161 to 170 of about 9,352 (287)

Publisher’s Note: Origin of polar nanoregions in relaxor ferroelectrics: Nonlinearity, discrete breather formation, and charge transfer [Phys. Rev. B83, 184301 (2011)] [PDF]

, 2011
J. Macutkevič, J. Banys, A. Bussmann‐Holder, A. R. Bishop   +3 more
openalex   +1 more source

Influence of Sintering Method on Piezoelectric Properties of High-Temperature Lead-Free Sc, Ga Modified Bifeo3-Batio3 Based Relaxor Ferroelectric Ceramics

, 2022
Akhilesh Kumar Singh, Srishti Paliwal, Prosun Mondal   +2 more
openalex   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Ferroelectric Dynamics in the Perovskite Relaxor PMN [PDF]

, 2002
P. M. Gehring
openalex   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Phase transition of chemically doped uniaxial relaxor ferroelectric [PDF]

, 2015
S. Chillal, Dimitrios Koulialias, S. N. Gvasaliya, R. A. Cowley, L. I. Ivleva, S. G. Lushnikov, A. Zheludev   +6 more
openalex   +1 more source

Band‐Edge Engineering of BiFeO3–KTaO3 Solid Solutions toward Efficient Solar Hydrogen Production

Advanced Energy and Sustainability Research, EarlyView.
This study reports BiFeO3–KTaO3 solid solutions as efficient photocathodes for solar hydrogen production. Combining experiments with density functional theory, the authors demonstrate composition‐driven band‐edge tuning, achieving high photocurrent density and hydrogen generation rates.
Yassine Nassereddine, Manal Benyoussef, Bouchra Asbani, Nitul Rajput, Mimoun El Marssi, Mustapha Jouiad   +5 more
wiley   +1 more source

Giant Bidirectional Electrocaloric Effects in Single Relaxor Ferroelectric Film by Manipulating Symmetry‐Conforming Defect Dipole States [PDF]

Ziyue Ma, Feifei Han, Wen Dong, Yan Yan, Mingkai Liu, H. Wang, Qi Zhang, Le Zhang, Jizhao Zou, Biaolin Peng   +9 more
openalex   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

Advanced Intelligent Discovery, EarlyView.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source