Results 161 to 170 of about 288,002 (309)

Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control

open access: yesAdvanced Electronic Materials, EarlyView.
Left: Polarization hysteresis (P‐E) characteristics of 200 nm wurtzite‐type Al0.73Sc0.27N without (ref. Nmix = 0) and with O‐doping (Nmix = 8 and 15), showing a clear drop of leakage current with O‐doping. Right: Piezoresponse for microscopy showing the as‐deposited polarization reversal from nitrogen (Nmix = 0) to metal polarity (Nmix = 15) via mixed ...
Md Redwanul Islam   +11 more
wiley   +1 more source

Soft phonon modes and diffuse scattering in Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 relaxor ferroelectrics

open access: yesJournal of Materiomics, 2018
0.29Pb(In1/2Nb1/2)O3-0.45Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 single crystals have been studied using triple-axis based elastic and inelastic neutron scattering.
Qian Li   +6 more
doaj  

Exploring the Bioengineering Potential of CoFe2O4‐BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient

open access: yesAdvanced Electronic Materials, EarlyView.
Magnetoelectric (ME) core–shell nanoparticles, particularly made of CoFe2O4‐BaTiO3, are emerging as promising materials for bioengineering applications. This perspective explores the evolution of measurement methodologies for their ME coefficient (α), highlighting variations in reported values.
Martina Lenzuni   +4 more
wiley   +1 more source

2–5 pyrochlore relaxor ferroelectric Cd2Nb2O7 and its Fe2+/Fe3+ modifications

open access: green, 2001
Н. Н. Колпакова   +6 more
openalex   +2 more sources

Impact of Al/Ti Electrodes on the Performance and Operational Stability of n‐Channel Solution‐Processed Solid‐State Electrolyte‐Gated Transistors: Applications in Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
The Al/Ti electrode demonstrates superior n‐channel performance and enhanced operational stability in diketopyrrolopyrrole (DPP)‐based organic electrolyte‐gated transistors (OEGTs) compared to conventional Au electrodes. A systematic investigation of polymer insulators and solid electrolyte gate dielectrics reveals electrode‐dependent contact ...
Quanhua Chen   +10 more
wiley   +1 more source

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

open access: yesAdvanced Electronic Materials, EarlyView.
High‐k dielectrics are in great demand for developing organic transistors operating at low voltages. However, the actual influence of high‐k dielectrics has been ambiguous. This work clarifies the correlation of dielectric constant and mobility through highly miscible high‐k polymer blends and provides a rational strategy on designing high‐performance ...
Beomjin Jeong, Kamal Asadi
wiley   +1 more source

Home - About - Disclaimer - Privacy