Results 111 to 120 of about 180,788 (231)

Present Problems of Reliability of Power Semiconductor Devices

Acta Polytechnica, 2000
The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high ...
V. Benda
doaj  

Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures

IEEE Transactions on Quantum Engineering
Complementary metal–oxide–semiconductor (CMOS)-based computing promises drastic improvement in performance at extremely low temperatures (e.g., 77 K, 10 K).
Shivendra Singh Parihar, Girish Pahwa, Baker Mohammad, Yogesh Singh Chauhan, Hussam Amrouch   +4 more
doaj   +1 more source

Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device

Microsystems & Nanoengineering, 2022
Tingting Lian, Yanming Xia, Zhizheng Wang, Xiaofeng Yang, Zhiwei Fu, Xin Kong, Shuxun Lin, Shenglin Ma   +7 more
doaj   +1 more source

Project ''diode reliability prediction technique'' [PDF]

Mathematical models for predicting reliability of semiconductor ...
Ryerson, C. M.
core   +1 more source

Reliability of the Transmission Line Method and Reproducibility of the Measured Contact Resistance of Organic Thin-Film Transistors. [PDF]

ACS Nano
Wollandt T, Steffens S, Radiev Y, Letzkus F, Burghartz JN, Witte G, Klauk H.   +6 more
europepmc   +1 more source

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors [PDF]

, 2015
Benoit Bakeroot, Brice De Jaeger, Denis Marcon, Guido Groeseneken, H. C. Lin, Jacopo Franco, Marleen Van Hove, Nicollian E. H., Robin Roelofs, Stefaan Decoutere, Steve Stoffels, Tian-Li Wu   +11 more
core   +1 more source

Memory Devices with HfO₂ Charge-Trapping and TiO₂ Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation. [PDF]

Materials (Basel)
Hwang I, Kim J, Lee J, Jung Y, Yoon C.
europepmc   +1 more source

Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules. [PDF]

Micromachines (Basel)
Liu P, Deng Y.
europepmc   +1 more source

A Study on the Development of Real-Time Chamber Contamination Diagnosis Sensors. [PDF]

Sensors (Basel)
Lee J, Kim K.
europepmc   +1 more source

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer. [PDF]

Nano Converg
Lee Y, Lee HW, Kim SJ, Park JM, Lee BH, Kang CG.   +5 more
europepmc   +1 more source