Results 111 to 120 of about 190,755 (383)
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi+5 more
doaj
Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures
In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail.
Yachao Zhang+5 more
doaj +1 more source
Bipolar Charge Plasma Transistor: A Novel Three Terminal Device
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter ...
Kumar, M. Jagadesh, Nadda, Kanika
core +1 more source
Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
wiley +1 more source
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang+6 more
doaj
Neutron and gamma irradiation effects on power semiconductor switches [PDF]
The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems ...
Frasca, A. J., Schwarze, G. E.
core +1 more source
Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices
In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation.
da Silva R+3 more
core +1 more source
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu+3 more
wiley +1 more source
Research on Power Semiconductor Converter Technology for Rail Transit Applications
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj
Optimal Current Control Strategy for Reliable Power Electronics Converters: Frequency-Domain Approach [PDF]
Power electronics converters are key enablers in the global energy transition for power generation, industrial and mobility applications; they convert electrical power in a controlled, reliable and efficient manner. The semiconductor switching devices, at the core of power converters, are the most likely component to fail due to the damage caused by ...
arxiv