High reliability screening of semiconductor and integrated circuit devices [PDF]
Jack P. Lombardi +2 more
openalex +1 more source
The concept of foulant particle manipulation and detachment from active microfiltration membranes via voltage‐driven vibrations is introduced. Actuator components are initially integrated onto the filtration membranes using an airbrush spray printing technique.
Irem Gurbuz, Hanieh Bazyar, Andres Hunt
wiley +1 more source
First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation. [PDF]
Han C +7 more
europepmc +1 more source
Reliability Study of Fiber Coupling Efficiency of 980 nm Semiconductor Laser [PDF]
Gang Liu +6 more
openalex +1 more source
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source
Advanced WBG power semiconductor packaging: nanomaterials and nanotechnologies for high-performance die attach paste. [PDF]
Ju YM +5 more
europepmc +1 more source
Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics [PDF]
Barry O’Sullivan +12 more
openalex +1 more source
Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner +9 more
wiley +1 more source
Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]
Song I, Kim J, Lee S, Myeong I.
europepmc +1 more source

