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Historical review of compound semiconductor reliability
Microelectronics Reliability, 2006This discussion is meant to look back at reliability progress over the last thirty years and identify trends and shortcomings. The main body of published work came from the ROCS workshop. While the workshop addresses various specific issues individually, it is the accumulation of a variety of data, information, and experience which forms the basis of ...
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Improving the Reliability of Semiconductor Converters
Russian Electrical Engineering, 2020This paper considers the opportunities for improving the reliability of power semiconductor converters by increasing the installed capacity margin and modifying the configuration of power circuit diagrams. As shown by regression analysis, the unit cost of an autonomous voltage inverter with an increase in the installed capacity of the frequency ...
M. E. Korzhavin +2 more
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Semiconductor device reliability physics and testing have been successfully integrated into a semiconductor device fabrication course as supplementary contents, to embody more comprehensively the challenges and concerns of the semiconductor industry.
Yang, Hong, Yuan, Jiann S.
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Semiconductor Memory Reliability
2009This chapter contains sections titled: General Reliability Issues RAM Failure Modes and Mechanisms Nonvolatile Memory Reliability Reliability Modeling and Failure Rate Prediction Design for Reliability Reliability Test Structures Reliability Screening and Qualification This chapter contains sections ...
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Reliability Of Semiconductor Injection Lasers
SPIE Proceedings, 1987Semiconductor injection lasers are key components in fiber optic communication systems, therefore their reliability is a determining factor in the technical success of these systems. Lasers are subject to several specific degradation mechanisms some of which affect the bulk of the optically active volume of the device, some the mirror facets and some ...
Wolf, H. D., Mettler, K., Lengyel, G.
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Reliability of MgAI Semiconductor Interconnects
IEEE Transactions on Reliability, 1970Data are presented comparing 1-percent MgAI wire with 1-percent SiAI wire for ultrasonically bonded interconnects on semiconductor devices. The effects of annealing time and temperature on the strength of the wire demonstrate the mechanical superiority of the 1-percent MgAI wire.
John M. Pankratz, Dean R. Collins
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Semiconductor reliability for the next century
Physics World, 1993The electronics industry now routinely produces devices with up to 1000 million transistors on a single semiconductor chip and this VLSI (very-large-scale integration) revolution shows no sign of stopping. As computer memory requirements push VLSI microfabrication technologies to new extremes, the next generation of dynamic random access memory (DRAM ...
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Semiconductor Device Reliability
1989I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of ...
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On the Relationship of Semiconductor Yield and Reliability
IEEE Transactions on Semiconductor Manufacturing, 2005Traditionally, semiconductor reliability has been estimated from the life tests or accelerated stress tests at the completion of manufacturing processes. Recent research, however, has been directed to reliability estimation during the early production stage through a relation model of yield and reliability.
K.O. Kim, M.J. Zuo, W. Kuo
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Durability and Reliability of Semiconductor Devices
MRS Proceedings, 1998AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved.
V. G. Sidorov +2 more
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