Results 251 to 260 of about 121,599 (302)

Stabilizing Stretchable Organic Transistors Through Small-Molecule Additive Blending for Ultra-Sensitive Pesticide Detection. [PDF]

Adv Sci (Weinh)
Wang W, Dai L, Li X, Zhang X, Yang H, Zheng X, Wang Y, Ye X, Yang H, Hu W.   +9 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Elements of semiconductor-device reliability

Proceedings of the IEEE, 1974
Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality.
C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek   +4 more
openaire   +3 more sources

Semiconductor network reliability assessment

Proceedings of the IEEE, 1964
The paper discusses the reliability test plan and test results on semiconductor network microelectronic devices. Included in the test plan are reliability programs, life testing, step stress testing, and environmental tests. The failure analysis-corrective action cycle is discussed at length.
J. Adams, W. Workman
openaire   +3 more sources

Achieving semiconductor equipment reliability

Proceedings. Seventh IEEE/CHMT International Electronic Manufacturing Technology Symposium, 2003
It is noted that the increasing complexity of semiconductor manufacturing processes and the competitiveness of worldwide device production demand step function improvements in production equipment reliability and predictability of its availability for use.
D. Ditmore, J. Stewart, R. Dudley, N. Bright   +3 more
openaire   +1 more source

Who Wants Reliable Plastic Semiconductors?

11th Reliability Physics Symposium, 1973
It has been found that a tri-layer metal contact system, consisting of platinum silicide-titanium-platinum-gold, is at least a factor of five better than a comparable aluminum metalized device with respect to humidity. However, all gold metalized devices are not necessarily this good; an example is given.
E. B. Hakim, G. Malinowski, R. Holevinski   +2 more
openaire   +2 more sources

Reliability Of Semiconductor Injection Lasers

SPIE Proceedings, 1987
Semiconductor injection lasers are key components in fiber optic communication systems, therefore their reliability is a determining factor in the technical success of these systems. Lasers are subject to several specific degradation mechanisms some of which affect the bulk of the optically active volume of the device, some the mirror facets and some ...
Wolf, H. D., Mettler, K., Lengyel, G.
openaire   +2 more sources

Semiconductor laser reliability

SPIE Proceedings, 1998
In this paper, a review of the state-of-the-art in semiconductor laser diode reliability is presented, with a particular regard to the reliability of laser diodes used in long-distance telecommunication system. Remarkable advances in semiconductor laser reliability have been demonstrated over their thirty year history, leading to estimated median ...
openaire   +1 more source

Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
openaire   +1 more source

Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
openaire   +2 more sources

Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
A. Silzars, D.J. Bates, A. Ballonoff, G. Taylor   +3 more
openaire   +1 more source