Results 81 to 90 of about 2,332,362 (329)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Research methods of reliability indicators of rectifier diode in tablet execution

EPJ Web of Conferences, 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source

Influence of design and coatings on the mechanical reliability of semiconductor wafers. [PDF]

, 2002
Karl J. Yoder
openalex   +1 more source

The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters

Advanced Functional Materials, EarlyView.
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul, Haonan Zhao, Collin N. Muniz, Mark E. Thompson, Stephen R. Forrest   +4 more
wiley   +1 more source