Results 81 to 90 of about 2,092,774 (331)

Research methods of reliability indicators of rectifier diode in tablet execution

EPJ Web of Conferences, 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj   +1 more source

Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory

Advanced Functional Materials, EarlyView.
The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour, Muhammad Nawaz Qaisrani, Christian Höhn, Johannes Laurenz Wolf, Negin Mogharehabed, Jennifer Velazquez Rojas, Wolfram Jaegermann, Erich Runge, Roel van de Krol, Thomas Hannappel, Christian Dreßler, Agnieszka Paszuk   +11 more
wiley   +1 more source

Flux‐Regulated Crystallization of Perovskites Using Machine Learning‐Predicted Solvent Evaporation Rates for X‐Ray Detectors

Advanced Functional Materials, EarlyView.
By integrating machine learning into flux‐regulated crystallization (FRC), accurate prediction of solvent evaporation rates in real time, improving crystallization control and reducing crystal growth variability by over threefold, is achieved. This enhances the reproducibility and quality of perovskite single crystals, leading to reproducible ...
Tatiane Pretto, Sergey Dayneko, Antoine Pavesic Junior, Nicholas Sandor, Alexander Hart, Yuki Haruta, Magdalena Bazalova‐Carter, Marcos J. L. Santos, Makhsud I. Saidaminov   +8 more
wiley   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

The Influence of Annealing on the Sb Layer in the Synthesis of [001]‐Oriented Sb2Se3 Film for Photoelectrochemical Hydrogen Gas Generation

Advanced Functional Materials, EarlyView.
[001]‐oriented Sb2Se3 film with improved crystallinity and adjusted composition is achieved via a new thermal treatment approach consisting of preliminary annealing of the Sb layer before its selenization. The findings of this work demonstrate enhanced charge carriers' transportation, a stable performance, and an improvement of H2 generation from ...
Magno B. Costa, Moisés A. de Araújo, Joaquim Puigdollers, Pablo Ortega, Teresa Andreu, Cristobal Voz, Edgardo Saucedo, Lucia H. Mascaro   +7 more
wiley   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3

Advanced Functional Materials, EarlyView.
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko, Oliver Bierwagen, Wonwoo Suh, Jeewon B. Choi, Celesta S. Chang, Kookrin Char   +5 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj  

Ultraviolet–Visible Spin‐Resolved Chip‐Scale Spectroscopy

Advanced Functional Materials, EarlyView.
By harnessing phase, wavelength, and spin multiplexing, the proposed meta‐spectrometer enables spin‐resolved spectral analysis within a compact footprint. The presented dual‐band (320–450 nm) spin‐resolved meta‐spectrometer features enhance optical functionality, allowing for the simultaneous discrimination of spectral content and spin states of light ...
Nasir Mahmood, Yujin Park, Naureen Butt, Joohoon Kim, Dongliang Gao, Muhammad Zubair, Tauseef Tauqeer, Lei Gao, Muhammad Qasim Mehmood, Junsuk Rho   +9 more
wiley   +1 more source

Reliable measurement of Seebeck coefficient in semiconductors

Journal of Physics: Conference Series, 2009
Reliable measurement of the Seebeck coefficient requires painstaking precautions. Unfortunately, these requirements are not met even in commercially available equipment, and therefore the obtained data often contain systematic errors. We describe equipment for reliable Seebeck measurements and present results on YB66 and B4.3C boron carbide as an ...
Walter Winkelbauer, Udo Kuhlmann, Helmut Werheit, Bernhard Herstell   +3 more
openaire   +2 more sources