Results 81 to 90 of about 99,199 (301)
Numerical modelling of a high temperature power module technology with SiC devices for high density power electronics [PDF]
, 2012 This paper presents the development of a new packaging technology using silicon carbide (SiC) power devices. These devices will be used in the next power electronic converters.
Carrillo, Francisco Javier +4 more
core
Superconducting proximity effect in epitaxial Al-InAs heterostructures
, 2019 Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits.
Dartiailh, Matthieu C. +5 more
core +1 more source
Technological sustainable materials and enabling in semiconductor memory industry: A review
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 This paper provides an overview of current and future deployment of recyclable direct materials and sustainable materials through recycling of interconnect metals used in semiconductor assembly and packaging. Also, with the aim to study the key technical
Chong Leong Gan +4 more
doaj
Advanced Functional Materials, EarlyView.Phosphorescent OLEDs suffer from efficiency roll‐off due to triplet‐polaron quenching (TPQ). This study demonstrates for a large set of host‐guest combinations a spectroelectrochemical method to measure the absorption of charged molecules, enabling determining TPQ Förster radii (2.5–4 nm) from the spectral overlap.
Stan E. A. Jaspars +5 more
wiley +1 more source
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
, 2010 In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs.
Bersuker, Gennadi +7 more
core +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
EPJ Web of Conferences, 2015 A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj +1 more source
High‐Entropy Magnetism of Murunskite
Advanced Functional Materials, EarlyView.The study of murunskite (K2FeCu3S4) reveals that its magnetic and orbital order emerges in a simple I4/mmm crystal structure with complete disorder in the transition metal positions. Mixed‐valence Fe ions randomly occupy 1/4 of the tetrahedral sites, with the remaining 3/4 being filled by non‐magnetic Cu+ ions.
Davor Tolj +18 more
wiley +1 more source
Characterization of High Temperature Optocoupler for Power Electronic Systems [PDF]
, 2019 High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of
Gonzalez, David
core +2 more sources
Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices
, 2010 In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation.
da Silva R +3 more
core +1 more source
Increase resource power electronics module on the physics of failure method
MATEC Web of Conferences, 2014 A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj +1 more source