Results 171 to 180 of about 142,166 (304)

Receptor‐Free Identification of Toxic Gases Enabled by Hygroscopic Aqueous Salt Films

Advanced Functional Materials, EarlyView.
Water as a gas sensor coating sounds impossible—until it stops evaporating. Here, hygroscopic salt solutions (LiCl, LiBr, H3PO4) form non‐drying aqueous films on CNT chemiresistors under ambient air. Gases partition into these liquid layers, sometimes transforming into water, and generate salt‐specific resistance fingerprints across a four‐channel ...
Seongwoo Lee, Yun‐Tae Kim, Hwarang Choi, Sanghwan Park, Seongyeop Lim, Chang Young Lee   +5 more
wiley   +1 more source

Resistance switching devices based on amorphous insulator-metal thin films

, 2014
Nanometallic resistance switching devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM) that is CMOS-compatible and meeting technological demand.
Yang, Xiang
core  

A Study on the Synaptic Behavior of Al/ZrO₂/TiO₂/Al Electronic Bipolar Resistance Switching Memristor. [PDF]

ACS Appl Mater Interfaces
Zou YL, Li XY, Ghenzi N, Park T, Shin DH, Shin SJ, Cho JM, Park TW, Cheong S, Mun SA, Hwang CS.   +10 more
europepmc   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Investigation of Resistance Switching and Synaptic Properties of VO _x for Neuromorphic Applications. [PDF]

ACS Omega
Ekinci G, Özkal B, Kazan S.
europepmc   +1 more source

Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO₃ Induced by Simple Annealing. [PDF]

Materials (Basel), 2019
Liao X, Zhang Y, Wang J, Kang J, Zhang J, Wang J, Zheng J, Wang H.   +7 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors. [PDF]

Micromachines (Basel), 2019
Lian X, Shen X, Lu L, He N, Wan X, Samanta S, Tong Y.   +6 more
europepmc   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Pseudomonas switch to resistance [PDF]

Genome Biology, 2002
openaire   +1 more source