Results 181 to 190 of about 142,166 (304)
Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO. [PDF]
Huang J +7 more
europepmc +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure. [PDF]
Munde MS +7 more
europepmc +1 more source
The nanostructure, size, and function of mRNA‐loaded lipid nanoparticles are evaluated before drying, within polymer microneedles, and after rehydration. The results reveal the polymer and LNP loadings required to recover nanostructure and preserve the delivery performance in dry‐state formulations.
Brendan P. Dyett +19 more
wiley +1 more source
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films. [PDF]
Barnes BK, Das KS.
europepmc +1 more source
Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
Volatile Memristive Devices with Analog Resistance Switching Based on Self-Assembled Squaraine Microtubes as Synaptic Emulators. [PDF]
Griffin K, Redmond G.
europepmc +1 more source
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source

