Results 91 to 100 of about 2,052,774 (301)
ABSTRACT Objective Treatment of disorders of consciousness (DoC) remains a major clinical challenge, and noninvasive, targeted modulation of deep brain structures has emerged as a promising therapeutic strategy. We aimed to evaluate the feasibility/safety and preliminary effects of thalamic temporal interference stimulation (TIS) targeting centromedian‐
Gengyao Hu +7 more
wiley +1 more source
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom +7 more
doaj +1 more source
Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun +9 more
core +1 more source
Nanoscale resistive switching memory devices: a review [PDF]
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms.
Slesazeck, Stefan +3 more
core +1 more source
ABSTRACT Objective The prognosis of glioblastoma (GBM) remains highly unfavorable, largely due to high tumor heterogeneity and an immunosuppressive microenvironment. However, the functional role of PANoptosis in this context is poorly understood. Methods Patients were stratified via K‐means clustering. A risk score model was constructed using prognosis‐
Langfei Tian +6 more
wiley +1 more source
A graphene integrated highly transparent resistive switching memory device
We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the ...
Sita Dugu +5 more
doaj +1 more source
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant
Min-Hwi Kim +5 more
core +1 more source
Intracerebral Hemorrhage Induces Monocyte TNF Signaling in Patients That Is Suppressed by BAF312
ABSTRACT Objective Intracerebral hemorrhage (ICH) causes high morbidity and mortality, with neurotoxic inflammation driven by infiltrating monocytes. This study is an in‐depth longitudinal examination of the immune response during the first week of ICH in the presence and absence of the immunomodulatory drug BAF312 (Siponimod).
Jonathan Howard DeLong +10 more
wiley +1 more source
ABSTRACT Objective Sleep disturbances have been implicated as a risk factor for developing Alzheimer's disease (AD), but evidence linking plasma AD biomarkers to sleep in cognitively unimpaired individuals remains limited. The present study examined associations between evening, morning, and overnight changes in plasma AD biomarkers and measures of ...
Cornelia Sauter +5 more
wiley +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction.
WenBin Liu +4 more
doaj +1 more source

