Results 101 to 110 of about 2,435,327 (343)
Resistive switching memory using biomaterials
Resistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic ...
LEE, JANG SIK, RAEISHOSSEINI, NILOUFAR
core +1 more source
Sertraline Treatment Can Mimic Niemann‐Pick Type C Biomarker Profile: A Diagnostic Pitfall
ABSTRACT Background Oxysterols (cholestane‐3β,5α,6β‐triol and 7‐ketocholesterol) and N‐palmitoyl‐O‐phosphocholineserine (PPCS) are sensitive biomarkers for Niemann‐Pick disease type C (NPC) screening. However, false‐positive results occur, with a biomarker profile suggestive of NPC despite the absence of pathogenic variants in genes involved in NPC or ...
Maria Makrygianni +19 more
wiley +1 more source
Resistive Switching Memory Based on Bioinspired Natural Solid Polymer Electrolytes
A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural
Jang-Sik Lee (1683466) +1 more
core +1 more source
ANODIC FORMATION OF HfO2 NANOSTRUCTURE ARRAYS FOR RESISTIVE SWITCHING APPLICATION
Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability,
Kamnev, Kirill +7 more
core +1 more source
ABSTRACT Subtotal hippocampal resection can leave residual hippocampal tissue, yet the immediate postoperative electrophysiologic evolution of such remnants is unknown. We describe a patient with drug‐resistant temporal lobe epilepsy in whom a hippocampal remnant was continuously monitored using a responsive neurostimulator (RNS) following subtotal ...
Patrick Hartnett +5 more
wiley +1 more source
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
doaj +1 more source
Resistive switching memory based on bioinspired natural solid polymer electrolytes
A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural
RAEIS HOSSEININILO, Lee, JS
core +1 more source
Flexible Resistive Switching Memory Device Based on Graphene Oxide [PDF]
A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness.
Kim, Sang Ouk +9 more
core +1 more source
ABSTRACT Chimeric antigen receptor (CAR) T‐cell therapy has been investigated in neurological diseases, encompassing both central nervous system malignancies and autoimmune disorders, thereby extending its application beyond hematological cancers.
Omar Alqaisi +5 more
wiley +1 more source
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue +16 more
doaj +1 more source

