Results 121 to 130 of about 2,052,774 (301)

Switching kinetics of SiC resistive memory for harsh environments

AIP Advances, 2015
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and ...
K. A. Morgan, J. Fan, R. Huang, L. Zhong, R. P. Gowers, L. Jiang, C. H. de Groot   +6 more
doaj   +1 more source

Resistive-Memory Embedded Unified RAM (R-URAM)

, 2009
A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film,
Kim, Sung-Ho, Choi, Sung-Jin, Choi, Yang-Kyu   +2 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Direct measurement of nanoscale filamentary hot spots in resistive memory devices. [PDF]

Sci Adv, 2022
Deshmukh S, Rojo MM, Yalon E, Vaziri S, Koroglu C, Islam R, Iglesias RA, Saraswat K, Pop E.   +8 more
europepmc   +1 more source

Low power resistive memory circuit design

With the increasing demand for energy-efficient memory solutions in areas such as Internet of Things (IoT) and mobile devices, low-power resistive memory technologies have become crucial.
Muhammad Ashik S/O Zakkirudeen
core  

Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells

, 2010
NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density nonvolatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the ...
S. Spiga, D. J. Wouters, L. Goux, IELMINI, DANIELE, M. Fanciulli, NARDI, FEDERICO, CAGLI, CARLO   +6 more
core  

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Resistive switching properties and mechanisms of La doped ZnO thin film memory cells

AIP Advances
In this paper, the memory cells based on ZnO thin films with various La concentrations (x% La:ZnO, x = 0, 2, 4, 6) are fabricated using the sol-gel spin coating method.
Jiahao Zhang, Jianbo Yang, Xiang Luo, Yan Zhang, Honglong Zheng, Xianpei Ren, Qiwei Hu, Ping He, Gang Yan, Yuanping Liu, Rui Wen, Qiang Li   +11 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Recent advances in resistive switching memory devices based on diverse material platforms for next generation electronics

Journal of Science: Advanced Materials and Devices
The fast evolution of information technology has significantly increased the demand for high-performance electronic devices, yet silicon-based hardware still faces fundamental challenges in fulfilling these requirements.
Wonseop Shin, Sungho Jang, Hyojung Kim
doaj   +1 more source