Results 131 to 140 of about 2,435,327 (343)
Tailoring Functional Properties of Ti–Ni–Cu Shape Memory Alloy Thin Films for MEMS Actuators
Advanced Engineering Materials, EarlyView.A comprehensive study of critical parameters required to develop well‐performing Ti–Ni–Cu thin film shape memory alloy microactuators is provided. Materials science and device integration aspects are integrated by addressing structural and physical relationships using complementary characterization techniques as well as a practical fabrication solution
Elaheh Akbarnejad +6 more
wiley +1 more source
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells
, 2010 NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density nonvolatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the ...
S. Spiga +6 more
core
Advanced Engineering Materials, EarlyView.The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee +7 more
wiley +1 more source
Flexible Transient Resistive Memory Based on Biodegradable Composites. [PDF]
Nanomaterials (Basel), 2022 Wang L, Zhang Y, Zhang P, Wen D.
europepmc +1 more source
Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures
Advanced Engineering Materials, EarlyView.We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann +2 more
wiley +1 more source
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
doaj +1 more source
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
, 2014 Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPA(n)OXD(m) with ...
Liu, Gang +4 more
core
Oxide Heterostructure Resistive Memory
, 2016 Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from ...
Yuchao Yang (1949509) +2 more
core +1 more source
Advanced Engineering Materials, EarlyView.Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley +1 more source