Results 111 to 120 of about 2,052,774 (301)
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj +1 more source
Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing. [PDF]
Zhou G +12 more
europepmc +1 more source
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Flexible Transient Resistive Memory Based on Biodegradable Composites. [PDF]
Wang L, Zhang Y, Zhang P, Wen D.
europepmc +1 more source
Sklansky tree adder realization in 1S1R resistive switching memory architecture
Redox-based resistive switches are an emerging class of non-volatile memory and logic devices. Especially, ultimately scaled transistor-less passive crossbar arrays using a selector/resistive-switch (1S1R) configuration are one of the most promising ...
Stephan Menzel +13 more
core +1 more source
Laser‐Induced Graphene from Waste Almond Shells
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
Memory, counter-memory and resistance: notes on the ‘Greek Debt Truth Commission’ [PDF]
This chapter seeks to understand the social and political significance of the Greek Truth Committee on the Public Debt (TCPD), a process set up by SYRIZA in June 2015 to contest the dominant ‘common sense’ of Greece’s sovereign debt. Affirming its value, this chapter analyses the TCPD as an important, strategic response to post-crash neoliberalism ...
openaire +3 more sources
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices. [PDF]
Koveshnikov S +6 more
europepmc +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source

