Results 111 to 120 of about 2,052,774 (301)

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

open access: yesElectronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing. [PDF]

open access: yesNat Commun, 2023
Zhou G   +12 more
europepmc   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Flexible Transient Resistive Memory Based on Biodegradable Composites. [PDF]

open access: yesNanomaterials (Basel), 2022
Wang L, Zhang Y, Zhang P, Wen D.
europepmc   +1 more source

Sklansky tree adder realization in 1S1R resistive switching memory architecture

open access: yes, 2019
Redox-based resistive switches are an emerging class of non-volatile memory and logic devices. Especially, ultimately scaled transistor-less passive crossbar arrays using a selector/resistive-switch (1S1R) configuration are one of the most promising ...
Stephan Menzel   +13 more
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Memory, counter-memory and resistance: notes on the ‘Greek Debt Truth Commission’ [PDF]

open access: yes, 2019
This chapter seeks to understand the social and political significance of the Greek Truth Committee on the Public Debt (TCPD), a process set up by SYRIZA in June 2015 to contest the dominant ‘common sense’ of Greece’s sovereign debt. Affirming its value, this chapter analyses the TCPD as an important, strategic response to post-crash neoliberalism ...
openaire   +3 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices. [PDF]

open access: yesNanomaterials (Basel), 2022
Koveshnikov S   +6 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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