Results 111 to 120 of about 2,435,327 (343)

Research Progress in Dielectric-Layer Material Systems of Memristors

Inorganics
With the rapid growth of data storage, traditional von Neumann architectures and silicon-based storage computing technologies will reach their limits and fail to meet the storage requirements of ultra-small size, ultra-high density, and memory computing.
Chunxia Wang, Xuemei Li, Zhendong Sun, Yang Liu, Ying Yang, Lijia Chen   +5 more
doaj   +1 more source

Silicon compatible Sn-based resistive switching memory

, 2018
Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Kiran Sasikumar, Supratik Guha, Ralu Divan, Sushant Sonde, Leonidas E. Ocola, Pabitra Choudhury, Kai Ni, Yuzi Liu, Liliana Stan, Daniel Rosenmann, Jianqiang Lin, Bhaswar Chakrabarti, Subramanian K. R. S. Sankaranarayanan, Suman Datta   +13 more
core   +1 more source

Nonvolatile resistive switching memory based on monosaccharide fructose film

, 2021
In this paper, we report resistive random-access memory (RRAM) based on a monosaccharide—fructose for nonvolatile memory in biocompatible and green electronics.
Xing, Yuan, Cheong, Kuan Yew, Yuan Xing, Zhao, Feng, Kuan Yew Cheong, Sueoka, Brandon, Brandon Sueoka, Feng Zhao   +7 more
core   +1 more source

Unraveling 4‐Phenylbutyrate's Therapeutic Role in SLC6A1 Disorders: Pharmacochaperoning Over HDAC Inhibition

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Variants in SLC6A1, encoding the GABA transporter 1 (GAT‐1), cause epilepsy, autism spectrum disorder, and developmental delay via loss of GABA uptake, impaired trafficking, and ER retention. We previously found that 4‐Phenylbutyrate (PBA), an FDA‐approved drug, restores GABA uptake and reduces seizures in SLC6A1‐related disorders ...
Melissa B. DeLeeuw, Karishma Randhave, Ekta Anand, Ziang (Debbie) Song, Wangzhen Shen, Jing‐Qiong Kang   +5 more
wiley   +1 more source

Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices [PDF]

Archives of Metallurgy and Materials
Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell.
Min Gyoo Cho, Jae Hee Go, Byung Joon Choi   +2 more
doaj   +1 more source

Resistive-Memory Embedded Unified RAM (R-URAM)

, 2009
A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film,
Kim, Sung-Ho, Choi, Sung-Jin, Choi, Yang-Kyu   +2 more
core   +1 more source

Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices

, 2022
Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure.
Swapan Majumdar (2277838), Surajit Sarkar (8671000), Farhana Yasmin Rahman (13133565), Debajyoti Bhattacharjee (829884), Syed Arshad Hussain (1609729), Hritinava Banik (10530738)   +5 more
core   +1 more source

Clinical Practice Guideline for Evaluation and Management of Peripheral Nervous System Manifestations in Sjögren's Disease

Arthritis Care &Research, EarlyView.
Objective Sjögren's disease is an autoimmune disorder that can impact multiple organ systems, including the peripheral nervous system (PNS). PNS manifestations, which can exist concurrently, include mononeuropathies, polyneuropathies, and autonomic nervous system neuropathies.
Anahita Deboo, Robert Fox, Katherine M. Hammitt, Julie Frantsve‐Hawley, Matthew C. Baker, Stamatina Danielides, Eduardo De Sousa, Brent P. Goodman, Jennifer K. King, Steven Mandel, Ghaith Noaiseh, Pantelis P. Pavlakis, George Sarka, R. Hal Scofield, Arun Varadhachary, Daniel J. Wallace, Matt Makara, Nancy Carteron, Steven Carsons, in collaboration with the Consensus Expert Panel (CEP) members, G. Alden Adkins, Brittany Adler, Hossein Ansari, Senada Arabelovic, Alan Baer, Denis Balaban, Shamik Bhattacharyya, Evelyn Bromet, Krishna Chaganti, Kamal Chemali, Melissa Cortez, Schartess Culpepper, Paul Dellaripa, Dana Direnzo, Daniel El Bogdadi, Robert Fearon, Mehrnez Fischbach, Judi Furlong, Christopher Gibbons, Rachael Gordon, Thomas Grader Beck, Syed Haider, Larry Hollenbeck, Chadwick R. Johr, Stuart S. Kassan, Brian King, Octavia Kincaid, Eugene Kissin, Vasileios Kyttaris, Lindsay Lally, Brandon M. Law, Janet Lewis, Scott M. Lieberman, Amanda Lusa, Joseph Lutt, Rashmi Maganti, Arthur M. Mandelin, Sara McCoy, Kerry Neall, Timothy Niewold, Anne Louise Oaklander, Ruben A. Peredo‐Wende, Lynn Petruzzi, Mark A. Porter, Guada Respicio Duque, Tania Reyna, Nathaniel M. Robbins, Elliot D. Rosenstein, Laura Rosow, Breanna Ruthrauff, Amit Sachdev, Nora Sandorfi, Sarah Schafer, Elena Schiopu, Chokkalingam Siva, Daniel Small, Sara M. Stern, Lauren Stiles, Susan Stoddard, Jinny Tavee, Donald Thomas, Edward L. Treadwell, Nagagopal Venna, Steven Vernino, Frederick B. Vivino, Brittany Weber, Sepideh Yadollahi, Huiying Yu, Scott Zashin   +88 more
wiley   +1 more source

Amorphous SiC resistive memory with embedded Cu nanoparticles

, 2017
Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/a-SiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu.
Fan, Junqing, Wang, Shuncai, Zhong, Le, Jiang, Liudi, Morgan, Katrina, Huang, Ruomeng, de Groot, Kees   +6 more
core   +1 more source

On the Lightweight Potential of Laser Additive Manufactured NiTi Triply Periodic Minimal Sheet Lattices

Advanced Engineering Materials, EarlyView.
This study explores the lightweight potential of laser additive‐manufactured NiTi triply periodic minimal surface sheet lattices. It systematically investigates the effects of relative density and unit cell size on surface quality, deformation recovery, compression behavior, and energy absorption.
Haoming Mo, Shuo Qu, Shiming Gao, Xu Song   +3 more
wiley   +1 more source