Results 151 to 160 of about 2,435,327 (343)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong
core   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device. [PDF]

Nanomaterials (Basel), 2021
Kim SW, Kwon J, Lee JS, Kang BH, Lee SW, Jung DG, Lee JY, Han M, Kim OG, Saianand G, Jung D.   +10 more
europepmc   +1 more source

Neural computing in random resistive memory

Recent years have witnessed a growing interest in artificial intelligence and internet of things, both of which demand ever-increasing efficiency and computational power due to the rapid expand of data volume and model size.
王少聪, Wang, Shaocong
core  

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

, 2011
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process.
Ryoo, Kyung-Chang, Hongsik Jeong, Jeong, Hongsik, Park, Byung-Gook, Kyung-Chang Ryoo, Jeong-Hoon Oh, Oh, Jeong-Hoon, Byung-Gook Park, Sunghun Jung, Jung, Sunghun   +9 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

One-Dimensional (NH=CINH₃)₃PbI₅ Perovskite for Ultralow Power Consumption Resistive Memory. [PDF]

Research (Wash D C), 2021
Song X, Yin H, Chang Q, Qian Y, Lyu C, Min H, Zong X, Liu C, Fang Y, Cheng Z, Qin T, Huang W, Wang L.   +12 more
europepmc   +1 more source

Multimodal Soft Surgical Robots Enabled by Eco‐Degradable, Sterilizable Polymers and Transient Electronics

Advanced Functional Materials, EarlyView.
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe, 
Minseong Chae, Kyung‐Sub Kim, Gyeong‐Seok Hwang, Jun‐Seok Shim, Sung‐Woo Kim, Yong‐Wu Kim, Jieun Han, Jae‐Young Bae, Jae‐Hwan Lee, Minjung Chae, Jooik Jeon, Joo‐Hyeon Park, You‐Jung Park, Ju‐Yong Lee, Sung‐Geun Choi, Min‐Ha Oh, Yong‐Joong Shin, Young‐In Ryu, Ji‐Woo Gu, Seong‐Yu Choi, Jeong‐Yun Sun, Jung Keun Hyun, Myoung‐Ryul Ok, Sang Yup Kim, Edyta Wyszkowska, Ju‐Young Kim, Kang‐Sik Lee, Seung‐Kyun Kang   +27 more
wiley   +1 more source