Results 171 to 180 of about 2,435,327 (343)

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Dataset for Amorphous SiC resistive memory with embedded Cu nanoparticles

Dataset of figures in the paper "Amorphous SiC resistive memory with embedded Cu nanoparticles". This dataset including XRD on a-SiC:Cu films and current-voltage measurements and endurance tests on Cu/a-SiC:Cu/Au resistive memories.
Fan, Junqing, Wang, Shuncai, Zhong, Le, Jiang, Liudi, De Groot, Cornelis, Morgan, Katrina, Huang, Ruomeng   +6 more
core   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Resisting the Commodification of Memory

The Maastricht Journal of Liberal Arts
At the center of this paper lies a pile of candy whose properties can inspire resistance against the commodification of memory. As popular media discourses often historize and depoliticize the immediacy of HIV/AIDS, the candy piles of Félix González-Torres manage to do the opposite. It practices remembrance of the pandemic in the 1980s, while resisting
openaire   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode. [PDF]

Nanomaterials (Basel), 2020
Alimkhanuly B, Kim S, Kim LW, Lee S.
europepmc   +1 more source