Results 161 to 170 of about 2,435,327 (343)
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Electroforming free resistive switching memory in two-dimensional VOx nanosheets
, 2015 We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices.
Hedhili, Mohamed N. +7 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
ChipsOxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications.
Biswajit Jana, Ayan Roy Chaudhuri
doaj +1 more source
Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation. [PDF]
Sci Rep, 2021 Min K, Jung D, Kwon Y.
europepmc +1 more source
Thin film characterizations for resistive memory
, 2013 Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and ...
Aw Yong, Boon Joon
core
Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Low power resistive memory circuit design
With the increasing demand for energy-efficient memory solutions in areas such as Internet of Things (IoT) and mobile devices, low-power resistive memory technologies have become crucial.
Muhammad Ashik S/O Zakkirudeen
core
Exploring resistive memory technologies for re-configurable logic application
, 2018 Reconfigurable logic application is a computer architecture combining some of the flexibility of software with the high performance of hardware by processing with very flexible high speed computing fabrics like field-programmable gate arrays (FPGAs). The
Fahima Mahzabin Chowdhury
core
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
, 2015 Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e ...
Ee Lim, Razali Ismail
core +1 more source