Results 161 to 170 of about 2,052,774 (301)

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO₂ Layer. [PDF]

Micromachines (Basel), 2020
Choi J, Kim S.
europepmc   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning. [PDF]

Adv Mater
Li Y, Yang J, Hou Q, Wang S, Liu S, Zhang H, Ye Z, Jiang J, Lin N, Xu X, Shang D, Qi X, Wang Z, Wang H.   +13 more
europepmc   +1 more source

Thin film characterizations for resistive memory

, 2013
Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and ...
Aw Yong, Boon Joon
core  

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Wide field-of-view anisotropic optoelectronic resistive memory for monocular in-sensor 3D motion perception and localization system. [PDF]

Nat Commun
Wang Z, Jiang B, Pan R, Ran L, Tang H, Harrabi K, Liu Y, Lin L, Zhou F.   +8 more
europepmc   +1 more source

NeuroMem: Analog Graphene-Based Resistive Memory for Artificial Neural Networks. [PDF]

Sci Rep, 2020
Abunahla H, Halawani Y, Alazzam A, Mohammad B.   +3 more
europepmc   +1 more source

Optically readable resistive random access memory in silicon plasmonics platform

, 2014
We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles.
Shappir, J, Goykhman, I, Emboras, A, Mazurski, N, Levy, U, ,, Desiatov, B, Stern, L   +7 more
core  

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv, Tauqir Shinwari, Kacho Imtiyaz Ali Khan, Jens Herfort, Chen Chen, Joan M. Redwing, Mehak Loyal, Gerhard Jakob, Mathias Kläui, Achim Trampert, Bernat Mundet, Belén Ballesteros, Manfred Ramsteiner, Roman Engel‐Herbert, Michael Hanke, João Marcelo J. Lopes   +15 more
wiley   +1 more source