Results 41 to 50 of about 64,817 (269)

Variability in Resistive Memories

open access: yesAdvanced Intelligent Systems, 2023
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial ...
Juan B. Roldán   +19 more
openaire   +6 more sources

Recent advances in organic‐based materials for resistive memory applications

open access: yesInfoMat, 2020
With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li   +9 more
doaj   +1 more source

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

open access: yes, 2009
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu   +7 more
core   +1 more source

RRAM variability and its mitigation schemes [PDF]

open access: yes, 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve   +3 more
core   +1 more source

Carbon-Based Resistive Memories [PDF]

open access: yes2016 IEEE 8th International Memory Workshop (IMW), 2016
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories.
Koelmans, WW   +17 more
openaire   +1 more source

Low-power resistive random access memory by confining the formation of conducting filaments

open access: yesAIP Advances, 2016
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang   +4 more
doaj   +1 more source

An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory

open access: yesAdvanced Electronic Materials, 2018
A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high ...
Yuxi Yang   +5 more
doaj   +1 more source

Computational Capacity and Energy Consumption of Complex Resistive Switch Networks [PDF]

open access: yes, 2015
Resistive switches are a class of emerging nanoelectronics devices that exhibit a wide variety of switching characteristics closely resembling behaviors of biological synapses.
Alireza Goudarzi   +4 more
core   +4 more sources

The role of histone modifications in transcription regulation upon DNA damage

open access: yesFEBS Letters, EarlyView.
This review discusses the critical role of histone modifications in regulating gene expression during the DNA damage response (DDR). By modulating chromatin structure and recruiting repair factors, these post‐translational modifications fine‐tune transcriptional programmes to maintain genomic stability.
Angelina Job Kolady, Siyao Wang
wiley   +1 more source

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

open access: yesScientific Reports, 2017
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from
Bohee Hwang, Jang-Sik Lee
doaj   +1 more source

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