Results 1 to 10 of about 1,751 (142)

An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs) [PDF]

IEEE Access, 2020
Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza, M. Moreau, M. Fieback, M. Taouil, S. Hamdioui   +4 more
doaj   +5 more sources

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices [PDF]

Nanomaterials
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared.
Yao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang   +6 more
doaj   +2 more sources

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories [PDF]

Frontiers in Neuroscience, 2022
One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options.
Andrea Baroni, Artem Glukhov, Eduardo Pérez, Christian Wenger, Christian Wenger, Enrico Calore, Enrico Calore, Sebastiano Fabio Schifano, Sebastiano Fabio Schifano, Piero Olivo, Daniele Ielmini, Cristian Zambelli   +11 more
doaj   +2 more sources

DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays [PDF]

Nature Communications
Neuroscience findings emphasize the role of dendritic branching in neocortical pyramidal neurons for non-linear computations and signal processing. Dendritic branches facilitate temporal feature detection via synaptic delays that enable coincidence ...
Simone D’Agostino, Filippo Moro, Tristan Torchet, Yiğit Demirağ, Laurent Grenouillet, Niccolò Castellani, Giacomo Indiveri, Elisa Vianello, Melika Payvand   +8 more
doaj   +2 more sources

Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State [PDF]

Electronics, 2021
RRAM density enhancement is essential not only to gain market share in the highly competitive emerging memory sector but also to enable future high-capacity and power-efficient brain-inspired systems, beyond the capabilities of today’s hardware. In this paper, a novel design scheme is proposed to realize reliable and uniform multi-level cell (MLC) RRAM
Aziza, Hassen, Hamdioui, Said, Fieback, Moritz, Taouil, Mottaqiallah, Moreau, Mathieu, Girard, Patrick, Virazel, Arnaud, Castellani-Coulie, Karine   +7 more
openaire   +4 more sources

Stateful Logic Using Phase Change Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
Stateful logic is a digital processing-in-memory (PIM) technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures.
Barak Hoffer, Nicolas Wainstein, Christopher M. Neumann, Eric Pop, Eilam Yalon, Shahar Kvatinsky   +5 more
doaj   +1 more source

Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory

Journal of Advanced Dielectrics, 2021
The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov, C. H. Suen, C. M. Wong, Xiaodan Tang, Z. L. Ho, K. Zhou, X. X. Chen, H. M. Liu, Xiaoyuan Zhou, J. Y. Dai   +9 more
doaj   +1 more source

Computational Failure Analysis of In-Memory RRAM Architecture for Pattern Classification CNN Circuits

IEEE Access, 2021
Power-efficient data processing subsystems performing millions of complex concurrent arithmetic operations per second form part of today’s essential solution required to meet the growing demand of edge computing applications, given the volume of ...
Nagaraj Lakshmana Prabhu, Nagarajan Raghavan   +1 more
doaj   +1 more source

Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay, Swaroop Ghosh   +5 more
doaj   +1 more source

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan, Swaroop Ghosh   +1 more
doaj   +1 more source