Results 41 to 50 of about 227,656 (114)

Multilevel resistive switching in Hf-based RRAM

, 2019
In this paper, the multilevel switching behaviors of resistive random-access memory (RRAM) devices with three different dielectric materials such as HfO2, HfZrO2 and HfAlO2 are investigated. We have further explored the switching characteristics with two
Wajda, C. S., Clark, R. D., Misra, D., Tapily, K., Huang, C. S., Leusink, G. J., Jain, B., Consiglio, S.   +7 more
core   +1 more source

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM [PDF]

, 2019
Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes.
Vivet, Pascal, André Lucas Chinazzo, Bastien Giraud, Pascal Vivet, Levisse, Alexandre Sébastien Julien, Mathew, Deepak, Chinazzo, Andre Lucas, Wehn, Norbert, Norbert Wehn, Deepak M. Mathew, Matthias Jung, Weis, Christian, Chinazzo, André, Christian Weis, Mathew, Deepak M., Alexandre Levisse, Giraud, Bastien, Levisse, Alexandre, Jung, Matthias   +18 more
core   +4 more sources

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices

Nanomaterials
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared.
Yao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang   +6 more
doaj   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

A versatile compact model of resistive random-access memory (RRAM) [PDF]

We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Salahuddin, Sayeef, Tung, Chien-Ting, Dabhi, Chetan Kumar, Hu, Chenming   +3 more
core   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Multilevel Resistive Switching Characteristics in Ag/SiO2/Pt RRAM Devices

, 2011
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes.
Liu, L. F., D. Yu, Gao, B., X. Zhang, Fu, Y. H., L. F. Liu, Kang, J. F., Zhang, X., X. Y. Liu, Zhang, F. F., J. F. Kang, Liu, X. Y., Y. H. Fu, F. F. Zhang, B. Gao, Chen, B., Yu, D., B. Chen   +17 more
core   +1 more source

Analysis of thermodynamic resistive switching in ZnO-based RRAM device

, 2023
Due to its excellent performance, resistive random access memory (RRAM) has become one of the most appealing and promising types of memory. However, RRAM has significant problems concerning understanding and modelling the resistive-switching mechanism ...
Algamili, Abdullah Saleh, Khir, Mohd Haris Md, Zahoor, Furqan, Bature, Usman Isyaku, Abbas, Haider, Hashwan, Saeed S Ba, Nawi, Illani Mohd   +6 more
core   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source