Results 51 to 60 of about 227,656 (114)

Resistive RAM Technology for SSDs

, 2017
Resistive RAM (RRAM) technology gathered a significant interest in the last decade for system-on-chip applications in silicon-based CMOS technologies like microcontrollers for wireless sensor nodes in the Internet of Things environment, and automotive ...
Cristian Zambelli, ZAMBELLI, Cristian, OLIVO, Piero, Piero Olivo   +3 more
core   +1 more source

Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices

Advanced Electronic Materials
Intra‐cortical brain‐machine interfaces (BMIs), able to decode neural activity in real‐time, represent a revolutionary opportunity for treating medical conditions.
Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis   +7 more
doaj   +1 more source

Nitrogen‐Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade‐Off for 1S–1R Phase‐Change Memory

Small, Volume 22, Issue 53, 21 September 2026.
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim   +6 more
wiley   +1 more source

An RRAM-based implementation of a template matching circuit for low-power analogue classification

Frontiers in Electronics
Recent advances in machine learning and neuro-inspired systems enabled the increased interest in efficient pattern recognition at the edge. A wide variety of applications, such as near-sensor classification, require fast and low-power approaches for ...
Patrick Foster, Georgios Papandroulidakis, Alex Serb, Spyros Stathopoulos, Themis Prodromakis   +4 more
doaj   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays

Nature Communications
Neuroscience findings emphasize the role of dendritic branching in neocortical pyramidal neurons for non-linear computations and signal processing. Dendritic branches facilitate temporal feature detection via synaptic delays that enable coincidence ...
Simone D’Agostino, Filippo Moro, Tristan Torchet, Yiğit Demirağ, Laurent Grenouillet, Niccolò Castellani, Giacomo Indiveri, Elisa Vianello, Melika Payvand   +8 more
doaj   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, Volume 36, Issue 52, 29 June 2026.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

Perspective on Ferroelectric and Nonferroelectric Low‐Dimensional Metal Halide Perovskites for Memristor Technology

Small Structures, Volume 7, Issue 6, June 2026.
In this review article, we have highlighted molecular engineering of spacer cations, the transition from ionic/filamentary to polarization‐driven ferroelectric resistive switching, key state‐of‐the‐art device demonstrations, and the future outlook. Together, these elements illustrate how dimensional control in low‐dimensional hybrid‐halide perovskites ...
Ranita Samanta, Rishukumar Panday, Giulia Ludovisi, Ramamoorthy Boomishankar, Daniele Cortecchia   +4 more
wiley   +1 more source

Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

, 2023
In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages ...
Velpula, Ravi Teja, Jain, Barsha, Nguyen, Hieu Pham Trung   +2 more
core   +1 more source

Electrochemical Memristive Devices Toward Brain‐Inspired Computing and In‐Memory Communication: Mechanisms, Materials, and Device Engineering

ChemElectroChem, Volume 13, Issue 9, 5 May 2026.
Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
wiley   +1 more source