Results 71 to 80 of about 227,656 (114)
, 2018 The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited.
Ziyu Lv +27 more
core +1 more source
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics
, 2013 The connection between the resistive-RAM (RRAM) operational-mechanism, performance, and utilized-dielectric properties is described. Specifically, the atomic-level description of bi-polar hafnia-based RRAM, which operations involve the repeatable rupture/
Andrea Padovani +11 more
core +1 more source
Word-oriented march test for RRAM-based automotive microcontroller memories
reservedAutomotive is an extremely complex field in which safety and performances must be perfectly synchronized. Nowadays electronic is the key to achieve the objective.
RECCI, NICOLA
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Ram Kumar's favourite place in Kinnaur
, 2018 Ram Kumar describes why Rakchham village is his favorite place in Kinnaur ...
Martinez, Philippe Antoine
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Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications
, 2018 We propose a selector-less Pr0.7Ca0.3MnO3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Phi(eff)), i.e., self-formed ...
Park, S +13 more
core +1 more source
Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device
, 2013 With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory in portable electronic products, the nonvolatile memory device must be scaled down.
Huang, Jheng-Jie
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Design space exploration of latency and bandwidth in RRAM-based solid state drives
, 2015 The continuous request for higher storage density in Solid State Drives (SSD) is pushing the NAND-Flash technology to their reliability and performance limits.
Cristian Zambelli +9 more
core +1 more source
Pulse voltage dependent resistive switching behaviors of HfO 2-based RRAM
, 2010 Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved.
Kang, Jinfeng +13 more
core +1 more source
Technology and Circuit Optimization of Resistive RAM for Low-Power, Reproducible Operation
, 2014 or Resistive RAM (RRAM), reproducibility in large arrays requires control of capacitive surge currents during programming. In this work, we present results from a 256kb RRAM chip which demonstrate how device optimization in conjunction with innovative ...
D. Sekar, B. Bateman, U. Raghuram, S. Bowyer, *Y. Bai, M. Calarrudo, P. Swab, J. Wu, S. Nguyen, N. Mishra, R. Meyer, M. Kellam, B. Haukness, C. Chevallier, * H. Wu, * H. Qian, ** F. Kreupl and G. Bronner
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Circuit reliability of low-power rram-based logic-in-memory architectures
, 2019 Logic circuits based on Resistive RAM (RRAM) devices and the material implication logic (IMPLY) are promising solutions for low-power logic-in-memory (LiM) architectures.
Zanotti T. +5 more
core +1 more source