Results 81 to 90 of about 227,656 (114)

Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

, 2014
Multilevel cell (MLC) characteristics of HfOx/TiOx/HfOx/TiOx multilayer -based RRAM were studied for the data storage application. The multilevel resistive switching operation was obtained by controlling the reset pulse voltage of the multilayer-based ...
Kang, Jinfeng, Chen, Bing, Wenjia Ma, Yiran Wang, Wang, Yiran, Gao, Bin, Liu, Lifeng, Jinfeng Kang, Lifeng Liu, Ma, Wenjia, Zhe Chen, Bin Gao, Liu, Xiaoyan, Chen, Zhe, Xiaoyan Liu, Bing Chen   +15 more
core   +1 more source

Ram Kumar's hopes for his children

, 2018
Ram Kumar discusses his hopes for his children and the power of education. The recording was made at Chhitkul's Senior Secondary School, located further down the village, on the river bank, towards the path leading to the military ...
Martinez, Philippe Antoine
core  

Ram Kumar's childhood in Chhitkul village

, 2018
Ram Kumar describes his childhood in Chhitkul village. The recording was made at the Government Senior Secondary School in Chhitkul village, where Kumar is a teacher.
Martinez, Philippe Antoine
core  

Resistive Switching and Current Status of $HfO_{2}$-Based RRAM

, 2014
The integration of embedded non-volatile memory (eNVM)devices in a Si CMOS manufacturing process requires to identifycost-effective process flow strategies and Si CMOS compatiblematerials.
Calka, Pauline, Walczyk, Damian, Schroeder, Thomas, Walczyk, Christian, Sowinska, Malgorzata   +4 more
core  

Corrigendum: Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

Frontiers in Neuroscience, 2017
Thilo Werner, Thilo Werner, Elisa Vianello, Elisa Vianello, Olivier Bichler, Daniele Garbin, Daniele Garbin, Daniel Cattaert, Blaise Yvert, Blaise Yvert, Barbara De Salvo, Barbara De Salvo, Luca Perniola, Luca Perniola   +13 more
doaj   +1 more source

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment.
Boubacar Traoré, B Giraud, A Levisse
exaly   +4 more sources

Fast-Write Resistive RAM (RRAM) for Embedded Applications

IEEE Design and Test of Computers, 2011
Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.
Ming-Jinn Tsai, Shyh-Shyuan Sheu, Heng-Yuan Lee   +2 more
exaly   +4 more sources

Experimental Set-Up For Novel Energy Efficient Charge-based Resistive RAM (RRAM) Switching

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020
This work explores a new method to reduce the energy consumption during the writing of process-spread resistive-based memories (RRAM), based on setting an initial electrical charge into a writing capacitor rather than applying constant voltage over a fixed time.
Sami Oukassi, Gabriel Molas
exaly   +3 more sources

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Mechanisms and performance of metal oxide resistive RAM (RRAM)

2013 IEEE International Integrated Reliability Workshop Final Report, 2013
Resistive RAM (RRAM) has emerged as a promising nonvolatile memory solution. Significant progress has been made on RRAM fabrication and characterization, as well as the understanding of the physical mechanisms. There are large varieties of RRAM materials and devices. However, some common characteristics have been observed in these devices, which can be
Matteo Meneghini
exaly   +2 more sources

Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Microelectronic Engineering, 2015
Display Omitted Effect of oxygen content on electrical performance of ZnO RRAM.Demonstrate the optimal oxygen content in ZnO film for RRAM application.Propose the resistance switching model of ZnO RRAM at different oxygen content. This study investigates the characteristics of zinc oxide (ZnO) film in a resistive random-access memory (RAM) (RRAM) with ...
Cheng-Li Lin, Chi-Chang Tang, Shu-Ching Wu, Pi-Chun Juan, Tsung-Kuei Kang   +4 more
exaly   +2 more sources