Results 91 to 100 of about 227,656 (114)

Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells

Journal of Electronic Materials, 2014
We present a study of Ni silicide as the bottom electrode in HfO2-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET ...
X P Wang, D -L Kwong, Z X Chen
exaly   +2 more sources

Effects of boron doping on resistance switching of graphene-oxide (GO) resistive RAM (RRAM)

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016
This work investigates the effects of GO RRAM w/ and w/o boron doping, and the effects of thermal annealing. From the experiment results, the B-doped GO RRAM annealed at 350°C shows the best performance with a higher resistance ratio of 4.15 orders and a higher dc switching cycles of 1300.
Cheng-Li Lin, Ke-Yu Hung, Tse-Wen Wang, Jian-Dong Lee, Yu -Jiun Lu   +4 more
exaly   +2 more sources

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

2013 IEEE International Electron Devices Meeting, 2013
We report a novel self-compliant and self-rectifying resistive switching memory cell, with area-scalable switching currents, featuring a set current density of ~5nA/nm2 ( 102 and retention extrapolates to 10yr at 101°C. The switching stack is fully based on ALD processes, using common high-k dielectrics and has a thickness of
Christoph Adelmann, V Paraschiv, I P Radu   +2 more
exaly   +2 more sources

STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance

IEEE Transactions on Device and Materials Reliability, 2022
International audienceCharacterizing and quantifying the endurance of Resistive RAM devices is critical to assess their reliability for integration in electronic systems.
Mathieu Moreau, Hassan Aziza
exaly   +2 more sources

Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell

IEEE Transactions on Electron Devices, 2019
International audienceWe demonstrate, for the first time, resistive RAM (RRAM) arrays where each cell can store 3 bits. Such full array-level demonstration is possible through special techniques (e.g., that exploit RRAM-specific characteristics of ...
Edith Beigné, H -S Philip Wong, Tony Wu   +2 more
exaly   +2 more sources

Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

2008 8th IEEE Conference on Nanotechnology, 2008
We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.
C. Nauenheim, C. Kugeler, A. Rudiger, R. Waser, A. Flocke, T. G. Noll   +5 more
openaire   +1 more source

High Speed Unipolar Switching Resistance RAM (RRAM) Technology

2006 International Electron Devices Meeting, 2006
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds.
Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, Y. Tokura   +15 more
openaire   +1 more source

Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

IEEE Transactions on Electron Devices, 2019
International audienceLimited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary ...
Edith Beigné, Laurent Grenouillet, Cristian Zambelli   +2 more
exaly   +2 more sources

High Speed Unipolar Switching with Very Low Reset Current Resistance RAM (RRAM) for Non-Volatile Memory Application

ECS Meeting Abstracts, 2008
Abstract not Available.
Seung-eon Ahn, Myoung-Jae Lee, Bo Soo Kang, Ki Hwan Kim, Chang Bum Lee, Yongsoo Park, Genrikh Stefanovich   +6 more
openaire   +1 more source

Incorporating Variability of Resistive RAM in Circuit Simulations Using the Stanford–PKU Model [PDF]

IEEE Nanotechnology Magazine, 2020
Intrinsic variability observed in resistive-switching devices (cycle-to-cycle and device-to-device) is widely recognised as a major hurdle for widespread adoption of Resistive RAM technology.
Mehrdad Biglari, Dietmar Fey, John Reuben   +2 more
exaly   +2 more sources