Results 61 to 70 of about 227,656 (114)

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

, 2014
HfAlOx based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated ...
Zhang, Weibing, Liu, Honggang, Ma, Wenjia, Wang, Guohui, Wang, Yiran, Wang, Shengkai, Sun, Bing, Liu, Lifeng   +7 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

, 2021
Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions.
Yong, Zhihua, Mamidala, Saketh, Ram, Mikkelsen, Anders, Borg, Mattias, Benter, Sandra, Saketh Ram, Mamidala, Wernersson, Lars-Erik, Persson, Karl-Magnus, D Acunto, Giulio, Liu, Yi, Timm, Rainer, Pan, Jisheng, D'Acunto, Giulio; id_orcid, Li, Zheshen   +13 more
core   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

Advanced Materials, Volume 38, Issue 26, 8 May 2026.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu, Ryan Thompson, C. Willem Rischau, Marli R. Cantarino, Premysl Marsik, Sergey L. Bud'ko, Neven Biškup, María Varela, Yurii G. Pashkevich, Serhii M. Orel, Thomas Prokscha, Andreas Suter, Jiangtao Zhao, Ugwumsinachi Oji, Marco Bonura, Peter Bencok, Zaher Salman, Stefano Gariglio, Christian Bernhard, Subhrangsu Sarkar   +19 more
wiley   +1 more source

Entropy source characterization in HfO2 RRAM for TRNG applications

, 2020
International audienceIn this work we perform an in-depth characterization of the entropy source available in Resistive RAM (RRAM) memory cells during the bit SET operation. We detail the motivation in using RRAM as an entropy source for TRNG.
Florian Pebay-Peyroula, Vianello, Elisa, Elisa Vianello, Thomas Dalgaty, Pebay-Peyroula, Florian, Dalgaty, Thomas   +5 more
core   +1 more source

Investigation of resistive random-accesss memory (RRAM) materials and devices

, 2019
An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other ...
Sim, Wei Kiat
core  

Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]

, 2010
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken, Kundu, Sandip, Sandip Kundu, Shida Zhong, Khursheed, Syed Saqib, Zhong, Shida, Saqib Khursheed, Bashir M. Al-Hashimi, Aitken, Robert, Al-Hashimi, Bashir   +9 more
core   +1 more source

Detecting Resistive-Opens in RRAM using Programmable DfT Scheme

, 2013
Resistive Random Access Memory (RRAM) is one of the emerging memory devices that possesses a combined attribute of SRAM, DRAM and flash. How- ever, as the technology and fabrication process of such a promising memory devices are still immature, RRAM ...
Norsuhaidah , Arshad, Sukreen Hana , Herman, Nor Zaidi , Haron   +2 more
core   +1 more source

Insights into resistive switching characteristics of TaOx-RRAM by Monte-Carlo simulation

, 2015
An atomistic Monte-Carlo simulator is developed for TaOx-based resistive switching random access memory (RRAM) including both the generation & recombination effect of oxygen vacancy defects with oxygen ions and the phase change effect between Ta2O5 ...
Kang, J.F., Chen, Z., Gao, B., Huang, P., Z. Chen, Zhao, Y.D., Y. D. Zhao, H. T. Li, X. Y. Liu, P. Huang, J. F. Kang, C. Liu, W. J. Ma, Li, H.T., Liu, X.Y., Ma, W.J., Zhang, F.F., F. F. Zhang, B. Gao, Liu, C., Chen, B., B. Chen   +21 more
core   +1 more source

Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices

, 2013
TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by
Kang, J.F., Liu, R., Gao, B., Z. Y. Lun, L. F. Liu, Lun, Z.Y., Han, D.D., X. Y. Liu, J. F. Kang, Liu, X.Y., R. Liu, Y. Hou, Xin, Z., Liu, L.F., B. Gao, Hou, Y., D. D. Han, Wang, Y., Y. Wang, Chen, B., Z. Xin, B. Chen   +21 more
core   +1 more source