Results 1 to 10 of about 84 (74)
An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs) [PDF]
Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza +4 more
doaj +5 more sources
Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State [PDF]
RRAM density enhancement is essential not only to gain market share in the highly competitive emerging memory sector but also to enable future high-capacity and power-efficient brain-inspired systems, beyond the capabilities of today’s hardware. In this paper, a novel design scheme is proposed to realize reliable and uniform multi-level cell (MLC) RRAM
Arnaud Virazel +2 more
exaly +5 more sources
Stateful Logic Using Phase Change Memory
Stateful logic is a digital processing-in-memory (PIM) technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures.
Barak Hoffer +5 more
doaj +1 more source
Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory
The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov +9 more
doaj +1 more source
Power-efficient data processing subsystems performing millions of complex concurrent arithmetic operations per second form part of today’s essential solution required to meet the growing demand of edge computing applications, given the volume of ...
Nagaraj Lakshmana Prabhu +1 more
doaj +1 more source
Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan +5 more
doaj +1 more source
Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan +1 more
doaj +1 more source
RRAM-based CAM combined with time-domain circuits for hyperdimensional computing
Content addressable memory (CAM) for search and match operations demands high speed and low power for near real-time decision-making across many critical domains. Resistive RAM (RRAM)-based in-memory computing has high potential in realizing an efficient
Yasmin Halawani +5 more
doaj +1 more source
ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets
Hardware Trojans in Integrated Circuits (ICs), that are inserted as hostile modifications in the design phase and/or the fabrication phase, are a security threat since the semiconductor manufacturing process is increasingly becoming globalized.
Karthikeyan Nagarajan +2 more
doaj +1 more source
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF
The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang +5 more
doaj +1 more source

