Results 161 to 170 of about 14,908,555 (316)

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S.   +5 more
europepmc   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

Advanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam, Towhidur Rahaman, Céline Besnard, Arnulf Rosspeintner, Latevi Max Lawson Daku, Saood Khan, Soumya Jyoti Ray, Thomas Bürgi   +7 more
wiley   +1 more source

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. [PDF]

Micromachines (Basel), 2022
Xie H, Hu J, Wang Z, Hu X, Liu H, Qi W, Zhang S.   +6 more
europepmc   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

, 2018
We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.
Jong Yeog Son, Tae Hoon Lee, Hyun Wook Shin, Yoonho Ahn, Woo-Hee Kim   +4 more
core   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

Advanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski, Higgins M. Wilson, Abdallah Y. M. Ali, Jiaxing Xu, Ruzhu Wang, Primož Poredoš   +5 more
wiley   +1 more source

Total dose hardness of TiN/HfOx/TiN resistive random access memory devices

, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated. Sweep and pulsed electrical characteristics were extracted before and after Co60 gamma irradiation. All devices were shown to be radiation hard up to 10Mrad(Si)
Redman-White, William, Potter, K, De Groot, Cornelis, Morgan, Katrina, Shaw, Chris, Huang, Ruomeng   +5 more
core  

Uniform self-rectifying resistive random-access memory based on an MXene-TiO₂ Schottky junction. [PDF]

Nanoscale Adv, 2022
Zang C, Li B, Sun Y, Feng S, Wang XZ, Wang X, Sun DM.   +6 more
europepmc   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source