Results 171 to 180 of about 62,185 (316)
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj +1 more source
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren +6 more
wiley +1 more source
An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array. [PDF]
Kao YF, Shih JR, Lin CJ, King YC.
europepmc +1 more source
Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li +6 more
wiley +1 more source
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid +6 more
wiley +1 more source
Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation. [PDF]
Yen TJ, Chin A, Gritsenko V.
europepmc +1 more source
xx xx. ABSTRACT Diabetic foot ulcer (DFU) is a chronic complication of diabetes, primarily caused by hyperglycemia, peripheral vascular disease, and neuropathy. Characterized by persistent hyperglycemia, impaired perfusion, inflammation, and infection, DFUs pose significant challenges to healing and are associated with high morbidity and amputation ...
Tang Yuqing +5 more
wiley +1 more source
This critical review presents a comprehensive roadmap for the precision 3D printing of cellulose. Quantitative correlations link ink formulation and rheological properties to print fidelity and final material performance. This framework guides the development of advanced functional materials, from biomedical scaffolds to electromagnetic shielding ...
Majed Amini +3 more
wiley +1 more source
This review explores recent advances in digital micromirror device (DMD)‐based lithography, focusing on its programmable light modulation, multi‐material compatibility, and dimensional patterning strategies. It highlights innovations from optical system design to materials integration and multifunctional applications, positioning DMD lithography as a ...
Yubin Lee +5 more
wiley +1 more source

