Results 241 to 250 of about 14,908,555 (316)

Spatiotemporally Ultrasound‐Controlled Nanoparticles Reprogramming Immunostimulatory Antigen‐Presenting Cancer‐Associated Fibroblasts to Enhance Cancer Immunotherapy

Advanced Science, EarlyView.
We developed an ultrasound‐controlled biomimetic nanoplatform, mRNA/V@M NPs, to co‐deliver CD74 mRNA and V‐9302 for fibrotic TNBC therapy. CD74 mRNA reprograms myCAFs into antigen‐presenting apCAF cells through the CD74‐MHC II pathway, while V‐9302 induces ICD and activates MHC I‐CD8+ T cell immunity.
Chen Ai, Weikai Sun, Yuxuan Zhao, Daqian Sun, Ting Meng, Yafei Qi, Fengyang Jiang, Jintang Sun, Zhiliang Gao, Dexin Yu   +9 more
wiley   +1 more source

Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays

Advanced Science, EarlyView.
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park, Jaewoo Choi, Gigon Nam, Junsu Yu, Donghyun Ryu, Jung‐Kyu Lee, Sungjoon Kim, Sungjun Kim   +7 more
wiley   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

Advanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao, Xiaojian Zhu, Runsheng Gao, Qian Jiang, Cui Sun, Yi Du, Xuerong Liu, Lixun Wang, Haolong Li, Yuejun Zhang, Run‐Wei Li   +10 more
wiley   +1 more source

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

IEEE Electron Device Letters, 2012
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in
Bing Chen, Lifeng Liu, Jinfeng Kang
exaly   +2 more sources

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Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

Advanced Functional Materials, 2023
In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐volatile memory based on emerging materials can be a promising avenue for introducing novel functionalities.
Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon‐Bin Jo, Geun Lee, S. Youn, H. Kim, Sung-Hun Jin   +9 more
semanticscholar   +1 more source

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

Advanced Functional Materials, 2022
This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI) semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which can be readily integrated with metal‐oxide n‐type counterparts for complementary circuit ...
Dhananjay Mishra, Krishnaiah Mokurala, Ajit Kumar, Seung Gi Seo, Hyeon Bin Jo, Sung-Hun Jin   +5 more
semanticscholar   +1 more source

Application of Resistive Random Access Memory in Hardware Security: A Review

Advanced Electronic Materials, 2021
Nowadays, advancements in the design of trusted system environments are relying on security provided by hardware‐based primitives, while replacing resource‐hungry software security measures. Emerging nonvolatile memory devices are promising candidates to
Gokulnath Rajendran, W. Banerjee, A. Chattopadhyay, Mohamed M. Sabry Aly   +3 more
semanticscholar   +1 more source

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Physica Status Solidi (a), 2021
The recent progress of selector and self‐rectifying devices for resistive random‐access memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak‐path current issue, and ...
T. Dongale, G. U. Kamble, D. Kang, S. Kundale, H. An, Tae Geun Kim   +5 more
semanticscholar   +1 more source

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

Advanced Functional Materials, 2021
Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies.
Chujun Yin, Chuanhui Gong, S. Tian, Yi Cui, Xue-Peng Wang, Yang Wang, Zhenheng Hu, Jianwen Huang, Chun-Yang Wu, Bo Chen, Xian-Fu Wang, Chao-Bo Li   +11 more
semanticscholar   +1 more source

Coding for Resistive Random-Access Memory Channels

GLOBECOM 2020 - 2020 IEEE Global Communications Conference, 2020
In this paper, we propose channel coding techniques that can mitigate both the sneak-path interference and the channel noise for resistive random-access memory (ReRAM) channels. The main challenge is that the sneak-path interference is data-dependent, and also correlated within a memory array, and hence the conventional error correction coding scheme ...
Guanghui Song, Kui Cai 0001, Xingwei Zhong, Jiang Yu, Jun Cheng 0001   +4 more
openaire   +1 more source